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Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits

CEAS Space Journal volume 9, pages 531–541 (2017)Cite this article

Abstract

In this work, we present the design, simulation and characterization of a frequency down-converter based on III–V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5–30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of − 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

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Acknowledgements

This work was supported by the ESA ARTES 5.1 ‘Electro-photonic frequency converter’ project.

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Authors and Affiliations

  1. Photonics Research Group, Department of Information Technology, Ghent University-IMEC, Ghent, Belgium

    K. Van Gasse, Z. Wang, S. Uvin, B. De Deckere & G. Roelkens

  2. Center for Nano- and Biophotonics, Ghent University, Ghent, Belgium

    K. Van Gasse, Z. Wang, S. Uvin & G. Roelkens

  3. Antwerp Space, Berkenrodelei 33, 2260, Hoboken, Belgium

    B. De Deckere, J. Mariën & L. Thomassen

Authors
  1. K. Van Gasse
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  2. Z. Wang
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  3. S. Uvin
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  4. B. De Deckere
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  5. J. Mariën
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  6. L. Thomassen
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  7. G. Roelkens
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Correspondence to K. Van Gasse.

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Van Gasse, K., Wang, Z., Uvin, S. et al. Ka-band to L-band frequency down-conversion based on III–V-on-silicon photonic integrated circuits. CEAS Space J 9, 531–541 (2017). https://doi.org/10.1007/s12567-017-0179-z

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  • DOI: https://doi.org/10.1007/s12567-017-0179-z

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