Abstract
We describe an improved version of spectrally resolved white-light interferometry that enables us to measure thin film thickness profile in a faster and more reliable way. Both the interferometric phase and the spectral reflectance of thin films are monitored at the same time in order to obtain accurate thickness and top surface height of thin films, leading to the complete reconstruction of the 3D tomographic profile of thin films. To do that, information related to the layers of thin films and top surface height of thin films must be decoupled and, based on wavelet transform, allowing it to be achieved without introducing two troublesome measurement steps or spectral carrier frequency. The experimental results for a prepared specimen showed that thin film thickness profile could be determined within an error range of 9 nm compared to well-known techniques. Due to the rigorous approach used in the proposed method, it is well suited for the in-line high-speed inspection of microelectronic devices produced in large quantities as is done in the semiconductor and flat-panel display industries.
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Abbreviations
- h :
-
top surface height of thin film deviated from reference plane
- d :
-
thickness of thin film
- I :
-
intensity of interference sampled on specimen
- φ :
-
total phase distribution along spectral wavenumber
- ψ :
-
phase variation due to multiple reflections within thin film layer
- I 0 :
-
spectral intensity of two beams directly reflected from reference mirror and specimen
- I 1 :
-
visibility function resulting from interference
- k :
-
spectral wavenumber
- R :
-
total reflection coefficient
- A :
-
real part of total reflection coefficient
- B :
-
imaginary part of total reflection coefficient
- r 01 :
-
Fresnel reflection coefficients of top boundaries of thin films
- r 12 :
-
Fresnel reflection coefficients of bottom boundaries of thin films
- N :
-
refractive index of thin films
- R ref :
-
spectral reflectance of reference specimen
- G ref :
-
spectral density of reference specimen
- G sam :
-
spectral density of unknown film thickness sample
- R sam :
-
spectral reflectance of unknown film thickness sample
- W :
-
continuous wavelet transform of signal
- ψ*:
-
mother wavelet
- a :
-
scale parameter that represents dilation of daughter wavelet
- b :
-
translation factor that shifts peak of daughter wavelet
- f b :
-
bandwidth parameter of Morlet wavelet
- f 0 :
-
wavelet frequency of Morlet wavelet
References
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Kim, MG., Pahk, HJ. Fast and Reliable Measurement of Thin Film Thickness Profile Based on Wavelet Transform in Spectrally Resolved White-Light Interferometry. Int. J. Precis. Eng. Manuf. 19, 213–219 (2018). https://doi.org/10.1007/s12541-018-0024-0
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DOI: https://doi.org/10.1007/s12541-018-0024-0