Abstract
Mixed abrasive slurry (MAS) is one of the non-traditional slurries with more than two different sizes, shapes or materials of abrasives which are to improve a chemical mechanical polishing (CMP) performance such as a removal rate. This paper focuses on the MAS mixed with two different sized abrasives and controlled by mixing ratio. Hybrid effect of the MAS was investigated from the removal mechanism of the mixed abrasives on oxide film. Experiments have been implemented with a 4-inch wafer with silicon dioxide film and KOH-based colloidal silica slurries. The slurry has two different sizes, 30 nm and 70 nm, with concentration of 1~30 wt%. The effects of abrasive concentration and mixing ratio were investigated in the oxide CMP in order to achieve high removal rate. During the oxide CMP with the MAS, the contact condition of abrasives was changed by mixing ratio. Through the experiment, it could be seen that two-body and three-body abrasions occur in mixed abrasive slurry according to the particle concentration. Finally, we could see that the proper ratio to achieve high removal rate was 2:1 (D30:D70) since most of the abrasives were active in material removal and carried out two-body abrasion.
References
Lee, H., Park, Y., Lee, S., and Jeong, H., “Preliminary Study on the Effect of Spray Slurry Nozzle in CMP for Environmental Sustainability,” Int. J. Precis. Eng. Manuf., Vol. 15, No. 6, pp. 995–1000, 2014.
Lee, C., Lee, H., Jeong, M., and Jeong, H., “A Study on the Correlation between Pad Property and Material Removal Rate in CMP,” Int. J. Precis. Eng. Manuf., Vol. 12, No. 5, pp. 917–920, 2011.
Lee, H., Jeong, H., and Dornfeld, D., “Semi-Empirical Material Rate Distribution Model for SiO2 Chemical Mechanical Polishing (CMP) Processes,” Precision Engineering, Vol. 37, No. 2, pp. 483–490, 2013.
Cook, L. M., “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solids, Vol. 120, No. 1, pp. 152–171, 1990.
Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.
Nogami, M. and Tomozawa, M., “Effect of Stress on Water Diffusion in Silica Glass,” Journal of the American Ceramic Society, Vol. 67, No. 2, pp. 151–154, 1984.
Kamigata, Y., Kurata, Y., Masuda, K., Amanokura, J., Yoshida, M., and Hanazono, M., “Why Abrasive Free Cu Slurry is Promising,” Materials Research Society Symposium Proceedings, Vol. 671, p. M1.3, 2001.
Carpio, R., Farkas, J., and Jairath, R., “Initial Study on Copper CMP Slurry Chemistries,” Thin Solid Films, Vol. 266, No. 2, pp. 238–244, 1995.
Yano, H., Matsui, Y., Minamihaba, G., Kawahashi, N., and Hattori, M., “High-Performance CMP Slurry With Inorganic/Resin Abrasive for Al/Low-k Damascene,” Materials Research Society Symposium Proceedings, Vol. 671, Paper No. M2.4, 2001.
Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.
Philipossian, A., and Olsen, S., “Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization,” Japanese Journal of Applied Physics, Vol. 42, No. 10, pp. 6371–6379, 2003.
Luo, J. and Dornfeld, D. A., “Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution, and Wafer-Pad Contact Area,” IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No. 1, pp. 45–56, 2003.
Choi, W., Abiade, J., Lee, S. M., and Singh, R. K., “Effects of Slurry Particles on Silicon Dioxide CMP,” Journal of the Electrochemical Society, Vol. 151, No. 8, pp. G512–G522, 2004.
Zhao, Y. and Chang, L., “A Micro-Contact and Wear Model for Chemical-Mechanical Polishing of Silicon Wafers,” Wear, Vol. 252, No. 3, pp. 220–226, 2002.
Luo, J. and Dornfeld, D. A., “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,” IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 2, pp. 112–133, 2001.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lee, H., Jeong, H. Analysis of removal mechanism on oxide CMP using mixed abrasive slurry. Int. J. Precis. Eng. Manuf. 16, 603–607 (2015). https://doi.org/10.1007/s12541-015-0081-6
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12541-015-0081-6