Skip to main content
Log in

Analysis of removal mechanism on oxide CMP using mixed abrasive slurry

  • Short Communication
  • Published:
International Journal of Precision Engineering and Manufacturing Aims and scope Submit manuscript

Abstract

Mixed abrasive slurry (MAS) is one of the non-traditional slurries with more than two different sizes, shapes or materials of abrasives which are to improve a chemical mechanical polishing (CMP) performance such as a removal rate. This paper focuses on the MAS mixed with two different sized abrasives and controlled by mixing ratio. Hybrid effect of the MAS was investigated from the removal mechanism of the mixed abrasives on oxide film. Experiments have been implemented with a 4-inch wafer with silicon dioxide film and KOH-based colloidal silica slurries. The slurry has two different sizes, 30 nm and 70 nm, with concentration of 1~30 wt%. The effects of abrasive concentration and mixing ratio were investigated in the oxide CMP in order to achieve high removal rate. During the oxide CMP with the MAS, the contact condition of abrasives was changed by mixing ratio. Through the experiment, it could be seen that two-body and three-body abrasions occur in mixed abrasive slurry according to the particle concentration. Finally, we could see that the proper ratio to achieve high removal rate was 2:1 (D30:D70) since most of the abrasives were active in material removal and carried out two-body abrasion.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. Lee, H., Park, Y., Lee, S., and Jeong, H., “Preliminary Study on the Effect of Spray Slurry Nozzle in CMP for Environmental Sustainability,” Int. J. Precis. Eng. Manuf., Vol. 15, No. 6, pp. 995–1000, 2014.

    Article  Google Scholar 

  2. Lee, C., Lee, H., Jeong, M., and Jeong, H., “A Study on the Correlation between Pad Property and Material Removal Rate in CMP,” Int. J. Precis. Eng. Manuf., Vol. 12, No. 5, pp. 917–920, 2011.

    Article  MathSciNet  Google Scholar 

  3. Lee, H., Jeong, H., and Dornfeld, D., “Semi-Empirical Material Rate Distribution Model for SiO2 Chemical Mechanical Polishing (CMP) Processes,” Precision Engineering, Vol. 37, No. 2, pp. 483–490, 2013.

    Article  Google Scholar 

  4. Cook, L. M., “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solids, Vol. 120, No. 1, pp. 152–171, 1990.

    Article  Google Scholar 

  5. Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.

    Google Scholar 

  6. Nogami, M. and Tomozawa, M., “Effect of Stress on Water Diffusion in Silica Glass,” Journal of the American Ceramic Society, Vol. 67, No. 2, pp. 151–154, 1984.

    Article  Google Scholar 

  7. Kamigata, Y., Kurata, Y., Masuda, K., Amanokura, J., Yoshida, M., and Hanazono, M., “Why Abrasive Free Cu Slurry is Promising,” Materials Research Society Symposium Proceedings, Vol. 671, p. M1.3, 2001.

    Article  Google Scholar 

  8. Carpio, R., Farkas, J., and Jairath, R., “Initial Study on Copper CMP Slurry Chemistries,” Thin Solid Films, Vol. 266, No. 2, pp. 238–244, 1995.

    Article  Google Scholar 

  9. Yano, H., Matsui, Y., Minamihaba, G., Kawahashi, N., and Hattori, M., “High-Performance CMP Slurry With Inorganic/Resin Abrasive for Al/Low-k Damascene,” Materials Research Society Symposium Proceedings, Vol. 671, Paper No. M2.4, 2001.

    Article  Google Scholar 

  10. Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.

    Google Scholar 

  11. Philipossian, A., and Olsen, S., “Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization,” Japanese Journal of Applied Physics, Vol. 42, No. 10, pp. 6371–6379, 2003.

    Article  Google Scholar 

  12. Luo, J. and Dornfeld, D. A., “Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution, and Wafer-Pad Contact Area,” IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No. 1, pp. 45–56, 2003.

    Article  Google Scholar 

  13. Choi, W., Abiade, J., Lee, S. M., and Singh, R. K., “Effects of Slurry Particles on Silicon Dioxide CMP,” Journal of the Electrochemical Society, Vol. 151, No. 8, pp. G512–G522, 2004.

    Article  Google Scholar 

  14. Zhao, Y. and Chang, L., “A Micro-Contact and Wear Model for Chemical-Mechanical Polishing of Silicon Wafers,” Wear, Vol. 252, No. 3, pp. 220–226, 2002.

    Article  Google Scholar 

  15. Luo, J. and Dornfeld, D. A., “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,” IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 2, pp. 112–133, 2001.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Haedo Jeong.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lee, H., Jeong, H. Analysis of removal mechanism on oxide CMP using mixed abrasive slurry. Int. J. Precis. Eng. Manuf. 16, 603–607 (2015). https://doi.org/10.1007/s12541-015-0081-6

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12541-015-0081-6

Keywords

Navigation