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Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells

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Abstract

N-type silicon with aluminum emitters for rear junctions was studied; aluminum back surface fields were replaced with n-type silicon wafers. Aluminum rear emitters for n-type silicon solar cells were studied with various rapid thermal processing conditions. With fast ramping-up and fast cooling, an aluminum rear junction was formed uniformly with low emitter recombination current. The effects of junction quality on solar cell efficiency were investigated.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul, 136-701, Korea

    Sungeun Park, Young Do Kim, Soohyun Bae, Seongtak Kim, Jooyong Song, Hyunho Kim, Hyo Min Park, Soomin Kim, Sung Ju Tark & Donghwan Kim

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  1. Sungeun Park
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  2. Young Do Kim
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  3. Soohyun Bae
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  4. Seongtak Kim
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  5. Jooyong Song
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  6. Hyunho Kim
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  7. Hyo Min Park
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  8. Soomin Kim
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  9. Sung Ju Tark
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  10. Donghwan Kim
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Correspondence to Donghwan Kim.

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Park, S., Kim, Y.D., Bae, S. et al. Effects of rapid thermal process on the junction properties of aluminum rear emitter solar cells. Met. Mater. Int. 18, 731–734 (2012). https://doi.org/10.1007/s12540-012-4022-y

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  • DOI: https://doi.org/10.1007/s12540-012-4022-y

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