Abstract
Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO2 layer (80 nm)/Si, and (3) SiNX layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO2 layer. However, the SiO2 did not withstand annealing at higher temperatures. The SiNX layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.
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Song, J.y., Park, S., Kim, Y.D. et al. Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells. Met. Mater. Int. 18, 699–703 (2012). https://doi.org/10.1007/s12540-012-4020-0
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DOI: https://doi.org/10.1007/s12540-012-4020-0