Abstract
Copper oxide films were deposited on silicon substrates by direct current magnetron sputtering of Cu in a mixture of O2 and Ar gases. Oxidation of the target as a result of adsorption or ion-plating of the reactive gases directly affects the discharge current and composition of the deposited films. We propose a kinetic model that relates the target oxidation to the discharge current, showing a one-to-one relationship between the discharge current characteristics and composition of the deposited films.
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Lee, J.H., Jeong, K.H., Cho, W.H. et al. Deposition of copper oxide by reactive magnetron sputtering. Met. Mater. Int. 17, 917–921 (2011). https://doi.org/10.1007/s12540-011-6008-6
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DOI: https://doi.org/10.1007/s12540-011-6008-6