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Electronic transport properties of Te-doped CoSb3 skutterudites prepared by hot pressing

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Abstract

Te-doped CoSb3 (CoSb3−yTey) skutterudites were prepared by hot pressing and their electronic transport properties examined. A single δ-phase was successfully obtained. The Seebeck and Hall coefficients confirmed that all the Te-doped CoSb3 showed n-type conduction. The Te atoms successfully acted as electron donors by substitution of the Sb atoms. The carrier concentration increased an order of 1020 cm−3 by Te doping, whereas the carrier mobility decreased as the doping content increased. The Seebeck coefficient and electrical resistivity decreased with an increase in the Te content. The doping considerably reduced the thermal conductivity due to electron-phonon scattering. The lattice contribution was dominant over the electronic contribution.

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Authors and Affiliations

  1. Department of Materials Science and Engineering/RIC-ReSEM, Chungju National University, 50 Daehangno, Chungju-si, Chungbuk, 380-702, Korea

    Mi-Jung Kim & Il-Ho Kim

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  1. Mi-Jung Kim
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  2. Il-Ho Kim
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Correspondence to Il-Ho Kim.

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Kim, MJ., Kim, IH. Electronic transport properties of Te-doped CoSb3 skutterudites prepared by hot pressing. Met. Mater. Int. 16, 459–463 (2010). https://doi.org/10.1007/s12540-010-0617-3

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  • DOI: https://doi.org/10.1007/s12540-010-0617-3

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