Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations


The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA- or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices.

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The work is supported by the National Natural Science Foundation of China (Nos. 11574029, 51661135026, 21773008, 11704027, 11574361, and 11834017), the National Key R&D Program of China (Nos. 2016YFA0300600 and 2016YFA0300904), the Strategic Priority Research Program of Chinese Academy of Sciences (Nos. XDB30000000), the Key Research Program of Frontier Sciences (No. QYZDB-SSW-SLH004) and the Youth Innovation Promotion Association CAS (No. 2018013).

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Correspondence to Junfeng Han or Wende Xiao.

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Wang, X., Yang, H., Yang, R. et al. Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations. Nano Res. 12, 1900–1905 (2019). https://doi.org/10.1007/s12274-019-2456-y

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  • transition-metal dichalcogenides
  • molybdenum selenide
  • screw dislocations
  • interlayer coupling
  • band gap