Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
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Keywordsgate-all-around field effect transistor (FET) nanowire GaN trap 1/f-noise
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This work was supported by the Basic Science Research Program through the NRF funded by Ministry of Education (Nos. 2013R1A6A3A04057719 and NRF-2018R1A6A1A03025761) and was also funded by the Ministry of Science, ICT and Fusion Research (No. 2018R1D1A1B07040603) and BK21 Plus funded by the Ministry of Education (No. 21A20131600011).
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