Water-assisted self-sustained burning of metallic single-walled carbon nanotubes for scalable transistor fabrication
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Although aligned arrays of semiconducting single-walled carbon nanotubes (s-SWNTs) are promising for use in next-generation electronics owing to their ultrathin bodies and ideal electrical properties, even a small portion of metallic (m-) counterparts causes excessive leakage in field-effect transistors (FETs). To fully exploit the benefits of s-SWNTs for use in large-scale systems, it is necessary to completely eliminate m-SWNTs from as-grown SWNT arrays and thereby obtain purely semiconducting large-area arrays, wherein numerous FETs can be flexibly built. In this study, we performed electrical burning of m-SWNTs assisted by water vapor and polymer coating to eliminate m-SWNTs over a long length for the scalable fabrication of transistors from the remaining s-SWNT arrays. During the electrical-breakdown process, the combination of water vapor and the polymer coating significantly enhanced the burning of the SWNTs, resulting in a self-sustained reaction along the nanotube axis. We found that m-SWNT segments partially remaining on the anode side resulted from one-way burning from the initial breakdown position, where Joule-heating-induced oxidation first occurred. The s-SWNT-enriched arrays obtained were used to fabricate multiple FETs with a high on-off current ratio. The results indicate the advantages of this approach over conventional electrical breakdown for the large-scale purification of s-SWNTs.
Keywordssingle-walled carbon nanotubes field-effect transistor selective removal electrical breakdown one-way burning
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Part of this work was financially supported by JSPS KAKENHI Grant Number JP15H05760, JP25107002, JP26420135 and JST-EC DG RTD within the Strategic International Collaborative Research Program (SICORP). This work was partly conducted at the Center for Nano Lithography & Analysis, VLSI Design and Education Center (VDEC), and at the Laser Alliance of the University of Tokyo. K. O. was financially supported by a JSPS Fellowship (No. JP15J07857).
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