Nano Research

, Volume 10, Issue 10, pp 3295–3302 | Cite as

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Research Article
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Abstract

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (>1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.

Keywords

crossbar array selector trapezoidal barrier gradient oxygen concentration high uniformity 

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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017

Authors and Affiliations

  • Qing Luo
    • 1
    • 2
  • Xiaoxin Xu
    • 1
    • 2
  • Hangbing Lv
    • 1
    • 2
    • 3
  • Tiancheng Gong
    • 1
    • 2
  • Shibing Long
    • 1
    • 2
  • Qi Liu
    • 1
    • 2
  • Ling Li
    • 1
    • 2
  • Ming Liu
    • 1
    • 2
    • 3
  1. 1.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroelectronicsChinese Academy of SciencesBeijingChina
  2. 2.University of Chinese Academy of SciencesBeijingChina
  3. 3.Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)NanjingChina

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