Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
- 347 Downloads
Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiN x growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires.
Keywordssemiconductor nanowire nanoimprint lithography metal–organic vapor phase epitaxial (MOVPE) patterning
Unable to display preview. Download preview PDF.
- Pierret, A.; Hocevar, M.; Diedenhofen, S. L.; Algra, R. E.; Vlieg, E.; Timmering, E. C.; Verschuuren, M. A.; Immink, G. W. G.; Verheijen, M. A.; Bakkers, E. P. A. M. Generic nano-imprint process for fabrication of nanowire arrays. Nanotechnology 2010, 065305.Google Scholar
- Borg, R. J.; Dienes, G. J. An Introduction to Solid State Diffusion; Academic Press, Inc.: San Diego, CA, 1988.Google Scholar
- Russo-Averchi, E.; Vukajlovic Plestina, J.; Tütüncüoglu, G.; Matteini, F.; Dalmau-Mallorquí, A.; de la Mata, M.; Rüffer, D.; Potts, H. A.; Arbiol, J.; Conesa-Boj, S. et al. High yield of GaAs nanowire arrays on Si mediated by the pinning and contact angle of Ga. Nano Lett. 2015, 15, 2869–2874.CrossRefGoogle Scholar
- Stringfellow, G. B. Organometallic Vapor-Phase Epitaxy: Theory and Practice, 2nd ed.; Academic Press: San Diego, CA, 1999.Google Scholar
- Mishra, A.; Titova, L. V.; Hoang, T. B.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Kim, Y.; Joyce, H. J.; Gao, Q.; Tan, H. H. et al. Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires. Appl. Phys. Lett. 2007, 91, 263104.CrossRefGoogle Scholar