Abstract
Recently, we achieved atomic-resolution optical imaging with near-field scanning optical microscopy using photon-induced force detection. In this technique, the surface photovoltage of the silicon-tip apex induced by the optical near field on the surface is measured as the electrostatic force. We demonstrated atomicresolution imaging of the near field on the α-Al2O3 (0001) surface of a prism. We investigated the spatial distribution of the near field by scanning at different tip-sample distances and found that the atomic corrugation of the near-field signal was observed at greater distances than that of the atomic force microscopy signal. As the tip-sample distance increased, the normalized signal-to-noise ratio of the near field is in a gradual decline almost twice that of the frequency shift (Δf).
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Yamanishi, J., Tokuyama, T., Naitoh, Y. et al. Distance dependence of atomic-resolution near-field imaging on α-Al2O3 (0001) surface with respect to surface photovoltage of silicon probe tip. Nano Res. 9, 530–536 (2016). https://doi.org/10.1007/s12274-015-0934-4
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DOI: https://doi.org/10.1007/s12274-015-0934-4