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Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction

Abstract

A novel infrared light emitting diode (LED) based on an ordered p-n heterojunction built of a p-Si1–x Ge x alloy and n-ZnO nanowires has been developed. The electroluminescence (EL) emission of this LED is in the infrared range, which is dominated by the band gap of Si1–x Ge x alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1–x Ge x alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.

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Correspondence to Renrong Liang or Caofeng Pan.

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Zhang, T., Liang, R., Dong, L. et al. Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1–x Ge x alloy heterojunction. Nano Res. 8, 2676–2685 (2015). https://doi.org/10.1007/s12274-015-0774-2

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  • DOI: https://doi.org/10.1007/s12274-015-0774-2

Keywords

  • ZnO nanowire
  • SiGe alloy
  • infrared light emitting diode
  • wavelength-tunable