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Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes

Abstract

We present a theoretical study of new nanostructures based on bilayered graphene with periodically arranged hexagonal holes (bilayered graphene antidots). Our ab initio calculations show that fabrication of hexagonal holes in bigraphene leads to connection of the neighboring edges of the two graphene layers with formation of a hollow carbon nanostructure sheet which displays a wide range of electronic properties (from semiconductor to metallic), depending on the size of the holes and the distance between them. The results were additionally supported by wave packet dynamical transport calculations based on the numerical solution of the time-dependent Schrödinger equation.

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Correspondence to Dmitry G. Kvashnin or Leonid A. Chernozatonskii.

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Kvashnin, D.G., Vancsó, P., Antipina, L.Y. et al. Bilayered semiconductor graphene nanostructures with periodically arranged hexagonal holes. Nano Res. 8, 1250–1258 (2015). https://doi.org/10.1007/s12274-014-0611-z

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Keywords

  • gaphene
  • antidots
  • electronic properties
  • DFT