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Nano Research

, Volume 7, Issue 10, pp 1449–1456 | Cite as

Fabrication of high-quality all-graphene devices with low contact resistances

  • Rong Yang
  • Shuang Wu
  • Duoming Wang
  • Guibai Xie
  • Meng Cheng
  • Guole Wang
  • Wei Yang
  • Peng Chen
  • Dongxia Shi
  • Guangyu Zhang
Research Article

Abstract

All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ∼5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.

Keywords

graphene all-graphene devices thinning contact resistance 

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Rong Yang
    • 1
  • Shuang Wu
    • 1
  • Duoming Wang
    • 1
  • Guibai Xie
    • 1
  • Meng Cheng
    • 1
  • Guole Wang
    • 1
  • Wei Yang
    • 1
  • Peng Chen
    • 1
  • Dongxia Shi
    • 1
  • Guangyu Zhang
    • 1
    • 2
  1. 1.Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijingChina
  2. 2.Collaborative Innovation Center of Quantum MatterBeijingChina

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