Comparative study of gel-based separated arcdischarge, HiPCO, and CoMoCAT carbon nanotubes for macroelectronic applications
- 469 Downloads
Due to their excellent electrical properties and compatibility with room-temperature deposition/printing processing, high-purity single-walled semiconducting carbon nanotubes hold great potential for macroelectronic applications such as in thin-film transistors and display back-panel electronics. However, the relative advantages and disadvantages of various nanotubes for macroelectronics remains an open issue, despite the great significance. Here in this paper, we report a comparative and systematic study of three kinds of mainstream carbon nanotubes (arc-discharge, HiPCO, CoMoCAT) separated using low-cost gel-based column chromatography for thin-film transistor applications, and high performance transistors-which satisfy the requirements for transistors used in active matrix organic light-emitting diode displays-have been achieved. We observe a trade-off between transistor mobility and on/off ratio depending on the nanotube diameter. While arc-discharge nanotubes with larger diameters lead to high device mobility, HiPCO and CoMoCAT nanotubes with smaller diameters can provide high on/off ratios (> 106) for transistors with comparable dimensions. Furthermore, we have also compared gel-based separated nanotubes with nanotubes separated using the density gradient ultracentrifuge (DGU) method, and find that gel-separated nanotubes can offer purity and thin-film transistor performance as good as DGU-separated nanotubes. Our approach can serve as the critical foundation for future carbon nanotube-based thin-film macroelectronics.
Keywordsseparated carbon nanotubes thin-film transistors gel-based column chromatography purity of semiconducting nanotubes diameter-dependence
Unable to display preview. Download preview PDF.
12274_2013_368_MOESM1_ESM.pdf (733 kb)
- Ryu, K. M.; Badmaev, A.; Wang, C.; Lin, A.; Patil, N.; Gomez, L.; Kumar, A.; Mitra, S.; Wong, H. S. P.; Zhou, C. W. CMOS-analogous wafer-scale nanotube-on-insulator approach for submicrometer devices and integrated circuits using aligned nanotubes. Nano Lett. 2009, 9, 189–197.PubMedCrossRefADSGoogle Scholar
- Gelinck, G. H.; Huitema, H. E.; van Veenendaal, E.; Cantatore, E.; Schrijnemakers, L.; van der Putten, J. B. P. H.; Geuns, T. C. T.; Beenhakkers, M.; Giesbers, J. B.; Huisman, B. H. et al. Flexible active-matrix displays and shift registers based on solution-processed organic transistors. Nat. Mater. 2004, 3, 106–110.PubMedCrossRefADSGoogle Scholar
- Zhang, J. L.; Wang, C.; Fu, Y.; He, Y. C.; Zhou, C. W. Air-stable conversion of separated carbon nanotube thin-film transistors from p-type to n-type using atomic layer deposition of high-kappa oxide and its application in CMOS logic circuits. ACS Nano 2011, 5, 3284–3292.PubMedCrossRefGoogle Scholar
- Kwon, O. K. TFT mobility requirement for AMOLED HDTVs. Thin film transistor technologies (TFTT VII): proceedings of the international symposium 2004, 146.Google Scholar
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013