The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the 〈110〉-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666–669.CrossRefGoogle Scholar
[2]
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene. Nature2005, 438, 197–200.CrossRefGoogle Scholar
[3]
Sprinkle, M.; Siegel, D.; Hu, Y.; Hicks, J.; Tejeda, A.; Taleb-Ibrahimi, A.; Le Fevre, P.; Bertran, F.; Vizzini, S.; Enriquez, H.; et al. First direct observation of a nearly ideal graphene band structure. Phys. Rev. Lett.2009, 103, 226803.CrossRefGoogle Scholar
[4]
Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A. Y.; Feng, R.; Dai, Z.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; et al. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B2004, 108, 19912–19916.CrossRefGoogle Scholar
[5]
Berger, C.; Song, Z.; Li, X.; Wu. X.; Brown, N.; Naud, C.; Mayou, D.; Li, T.; Hass, J.; Marchenkov, A. N.; et al. Electronic confinement and coherence in patterned epitaxial graphene. Science2006, 312, 1191–1196.CrossRefGoogle Scholar
[6]
Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J.; Ohta, T.; Reshanov, S. A.; Rohr, J.; et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater.2009, 8, 203–207.CrossRefGoogle Scholar
[7]
Ouerghi, A.; Kahouli, A.; Lucot, D.; Portail, M.; Travers, L.; Gierak, J.; Penuelas, J.; Jegou, P.; Shukla, A.; Chassagne, T. et al. Epitaxial graphene on cubic SiC(111)/Si(111) substrate. Appl. Phys. Lett.2010, 96, 191910.CrossRefGoogle Scholar
[8]
Coletti, C.; Emtsev, K. V.; Zakharov, A. A.; Ouisse, T.; Chaussende, D.; Starke, U. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Appl. Phys. Lett.2011, 99, 081904.CrossRefGoogle Scholar
[9]
Portail, M.; Michon, A.; Vezian, S.; Lefebvre, D.; Chenot, S.; Roudon, E.; Zielinski, M.; Chassagne, T.; Tiberj, A.; Camassel, J.; et al. Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC. J. Cryst. Growth2012, 349, 27–35.CrossRefGoogle Scholar
[10]
Suemitsu, M.; Fukidome, H. Epitaxial graphene on silicon substrates. J. Phys. D: Appl. Phys.2010, 43, 374012.CrossRefGoogle Scholar
[11]
Aristov, V. Y.; Urbanik, G.; Kummer, K.; Vyalikh, D. V.; Molodtsova, O. V.; Preobrajenski, A. B.; Zakharov, A. A.; Hess, C.; Hänke, T.; Büchner, B.; et al. Graphene synthesis on cubic SiC/Si wafers. Perspectives for mass production of graphene-based electronic devices. Nano Lett.2010, 10, 992–995.CrossRefGoogle Scholar
[12]
Ouerghi, A.; Ridene, M.; Balan, A.; Belkhou, R.; Barbier, A.; Gogneau, N.; Portail, M.; Michon, A.; Latil, S.; Jegou, P.; et al. Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers. Phys. Rev. B2011, 83, 205429.CrossRefGoogle Scholar
[13]
Hass, J.; Varchon, F.; Millan-Otoya, J. E.; Sprinkle, M.; Sharma, N.; de Heer, W. A.; Berger, C.; First, P. N.; Magaud, L.; Conrad, E. H. Why multilayer graphene on 4H-SiC(0001) behaves like a single sheet of graphene. Phys. Rev. Lett.2008, 100, 125504.CrossRefGoogle Scholar
[14]
Semond, F.; Soukiassian, P.; Mayne, A.; Dujardin, G.; Douillard, L.; Jaussaud, C. Atomic structure of the β-SiC(100)-(3×2) surface. Phys. Rev. Lett.1996, 77, 2013–2016.CrossRefGoogle Scholar
[15]
Soukiassian, P.; Semond, F.; Douillard, L.; Mayne, A.; Dujardin, G.; Pizzagalli, L.; Joachim, C. Direct observation of a β-SiC(100)-c(4×2) surface reconstruction. Phys. Rev. Lett.1997, 78, 907–910.CrossRefGoogle Scholar
[16]
Aristov, V. Y.; Douillard, L.; Fauchoux, O.; Soukiassian, P. Temperature-induced semiconducting c(4×2) ↔ metallic (2×1) reversible phase transition on the β-SiC(100) surface. Phys. Rev. Lett.1997, 79, 3700–3703.CrossRefGoogle Scholar
[17]
Derycke, V.; Soukiassian, P.; Mayne, A.; Dujardin, G. Scanning tunneling microscopy investigation of the C-terminated β-SiC(100) c(2×2) surface reconstruction: dimer orientation, defects and antiphase boundaries. Surf. Sci.2000, 446, L101–L107.CrossRefGoogle Scholar
[18]
Doillard, L.; Aristov, V. Y.; Semond, F.; Soukiassian, P. Pairs of Si atomic lines self-assembling on the β-SiC(100) surface: An 8×2 reconstruction. Surf. Sci.1998, 401, L395–L400.CrossRefGoogle Scholar
[19]
Hupalo, M.; Conrad, E. H.; Tringides, M. C. Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces: A scanning tunneling microscopy study. Phys. Rev. B2009, 80, 041401(R).CrossRefGoogle Scholar
[20]
Hass, J.; de Heer, W. A.; Conrad, E. H. The growth and morphology of epitaxial multilayer graphene. J. Phys.: Condens. Matter2008, 20, 323202.CrossRefGoogle Scholar
[21]
Hibino, H.; Kageshima, H.; Maeda, F.; Nagase, M.; Kobayashi, Y.; Yamaguchi, H. Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons. Phys. Rev. B2008, 77, 075413.CrossRefGoogle Scholar
[22]
Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Phys. Rev. Lett.2009, 103, 246804.CrossRefGoogle Scholar
[23]
Meyer, J. C.; Geim, A. K.; Katsnelson, M. I.; Novoselov, K. S.; Booth, T. J.; Roth, S. The structure of suspended graphene sheets. Nature2007, 446, 60–63.CrossRefGoogle Scholar
[24]
Fasolino, A.; Los, J. H.; Katsnelson, M. I. Intrinsic ripples in graphene. Nat. Mater.2007, 6, 858–861.CrossRefGoogle Scholar
[25]
Mashoff, T.; Pratzer, M.; Geringer, V.; Echtermeyer, T. J.; Lemme, M. C.; Liebmann, M.; Morgenstern, M. Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide. Nano Lett.2010, 10, 461–465.CrossRefGoogle Scholar
[26]
Horcas, I.; Fernandez, R.; Gomez-Rodriguez, J. M.; Colchero, J.; Gomez-Herrero, J.; Baro, A. M. WSxM: A software for scanning probe microscopy and a tool for nanotechnology. Rev. Sci. Instrum.2007, 78, 013705.CrossRefGoogle Scholar
[27]
Huang, P. Y.; Ruiz-Vargas, C. S.; van der Zande, A. M.; Whitney, W. S.; Levendorf, M. P.; Kevek, J. W.; Garg, S.; Alden, J. S.; Hustedt, C. J.; Zhu, Y.; et al. Grains and grain boundaries in single-layer graphene atomic patchwork quilts. Nature2011, 469, 389–392.CrossRefGoogle Scholar
[28]
Tao, C.; Jiao, L.; Yazyev, O. V.; Chen, Y.-C.; Feng, J.; Zhang, X.; Capaz, R. B.; Tour, J. M.; Zettl, A.; Louie, S. G. et al. Spatially resolving edge states of chiral graphene nanoribbons. Nat. Phys.2011, 7, 616–620.CrossRefGoogle Scholar
[29]
Tapaszto, L.; Dobrik, G.; Lambin, P.; Biro, L. P. Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography. Nat. Nanotechnol.2008, 3, 397–401.CrossRefGoogle Scholar
[30]
Gross, L.; Mohn, F.; Moll, N.; Schuler, B.; Criado, A.; Guitian, E.; Pena, D.; Gourdon, A.; Meyer, G. Bond-order discrimination by atomic force microscopy. Science2012, 337, 1326–1329.CrossRefGoogle Scholar
[31]
Shirley, E. L.; Terminello, L. J.; Santoni, A.; Himpsel, F. J. Brillouin-zone-selection effects in graphite photoelectron angular distributions. Phys. Rev. B1995, 51, 13614–13622.CrossRefGoogle Scholar
