Nano Research

, Volume 6, Issue 4, pp 263–268

Wafer scale direct-write of Ge and Si nanostructures with conducting stamps and a modified mask aligner

Research Article

DOI: 10.1007/s12274-013-0302-1

Cite this article as:
Sato, H., Vasko, S.E. & Rolandi, M. Nano Res. (2013) 6: 263. doi:10.1007/s12274-013-0302-1


The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive for medium scale laboratory prototyping. We demonstrate the inexpensive wafer scale directwrite of Ge and Si nanostructures with a 4-inch mask aligner retrofitted with a conducting microstructured stamp. A bias applied between the stamp and an underlying silicon substrate results in the reaction of diphenylgermane and diphenylsilane precursors at the stamp-substrate interface to yield the directwrite of Ge and Si nanostructures in determined locations. With the increasing number of outdated mask aligners available from the semiconductor industry and an extensive library of liquid precursors, this strategy provides facile, inexpensive, wafer scale semiconductor direct-write for applications such as electronics, photonics, and photovoltaics.

Graphical abstract


Ge Si nanolithography microcontact printing scanning probe lithography 

Supplementary material

12274_2013_302_MOESM1_ESM.pdf (491 kb)
Supplementary material, approximately 490 KB.

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Hideki Sato
    • 1
    • 2
  • Stephanie E. Vasko
    • 1
    • 3
  • Marco Rolandi
    • 1
  1. 1.Department of Materials Science and EngineeringUniversity of WashingtonSeattleUSA
  2. 2.Japan Patent OfficeTokyoJapan
  3. 3.Department of ChemistryUniversity of WashingtonSeattleUSA

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