Advertisement

Microgravity Science and Technology

, Volume 28, Issue 2, pp 143–154 | Cite as

A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

  • Jianding YuEmail author
  • Yan Liu
  • Xiuhong Pan
  • Hongyang Zhao
  • Velu Nirmal Kumar
  • Mukannan Arivanandhan
  • Yoshimi Momose
  • Yasuhiro Hayakawa
  • Xingwang Zhang
  • Xinghong Luo
  • Yasuhiro Okano
  • Yuko Inatomi
ORIGINAL ARTICLE

Abstract

The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In xGa 1−xSb with higher indium composition at Chinese recovery satellite SJ-10 in near future.

Keywords

Microgravity Chinese recovery satellite Gravity effect Alloy semiconductor X-ray penetration method Temperature freezing method 

Notes

Acknowledgments

We thank Prof. M.Kumagawa, (Shizuoka Univ.), Prof. A.Hirata (Waseda Univ.), Prof. N.Imaishi (Kyusyu Univ), S.Yoda (JAXA), and Prof. K.Arafune (University of Hyogo) for the experiment using a Chinese recovery satellite. The part of the work was supported by the cooperative research projects of the Research Institute of Electronics, Shizuoka University.

References

  1. Croll, A., Müller, W., Nitsche, R.: Floating zone growth of surface coated silicon under microgravity. J. Crystal Growth 79, 65 (1986)CrossRefGoogle Scholar
  2. Danilewsky, A.N., Benz, K.W., Nishinaga, T.: Growth Kinetics in Space- and Eearth-grown InP and GaSb Crystals. J. Crystal Growth 99, 1282 (1990)CrossRefGoogle Scholar
  3. Duffar, T., Pret-harter, I., Dusserre, P.: Crucible de-wetting during Bridgman Growth of Semiconductors in Microgravity. J. Crystal Growth 100, 171 (1990)CrossRefGoogle Scholar
  4. Duffar, T., Serrano, M.D., Moore, C.D., Camassel, J., Contreras, S., Dusserre, P., Rivoallant, A., Tanner, B.K.: Bridgman Solidification of GaSb in Space. J. Crystal Growth 192, 63 (1998)CrossRefGoogle Scholar
  5. Eyer, A., Leiste, H., Nitsche, R.: Floating zone growth of silicon under microgravity in a sounding rocket. J. Crystal Growth 71, 173 (1985)CrossRefGoogle Scholar
  6. Eyer, A., Leiste, H.: Striation free silicon crystals by float zoning with surface coated melt. J. Crystal Growth 71, 249 (1985)CrossRefGoogle Scholar
  7. Hayakawa, Y., Balakrishnan, K., Komatsu, H., Murakami, N., Nakamura, T., Koyama, T., Ozawa, T., Okano, Y., Miyazawa, M., Dost, S., Dao, L.H., Kumagawa, M.: Microravity experiments on melting and crystallization of InGaSb. Acta Astronautica 51, 221 (2002)CrossRefGoogle Scholar
  8. Hayakawa, Y., Okano, Y., Hirata, A., Imaishi, N, Kumagiri, Y., Zhong, X., Xie, X., Yuan, B., Wu, F., Liu, H., Yamaguchi, T., Kumagawa, M.: Experimental and Numerical Investigations on Dissolution and Recrystallization Processes of GaSb/InSb/GaSb under Microgravity and Terrestrial Conditions. J. Crystal Growth 213, 40 (2000)CrossRefGoogle Scholar
  9. Hayakawa, Y., Hikida, T., Morii, H., Konno, A., Chen, C., Arafune, K., Kawai, H., Koyama, T., Momose, Y., Ozawa, T., Aoki, T.: In-Situ Observation of Composition Profiles in the Solution by X-ray Penetration Method. J. Crystal Growth 310, 1487 (2008)CrossRefGoogle Scholar
  10. Hayakawa, Y., Balakrishnan, K., Arafune, K., Ozawa, T., Okano, Y., Hirata, A., Kumagawa, M. Microgravity Experiments on Dissolution and Crystallization of InGaSb, in Studies on Crystal Growth under Microgravity. In: Hayakawa, Y., Furukawa, Y. (eds.) , pp 1–50. Transworld Research Network (2005)Google Scholar
  11. Hirata, A., Okitsu, K., Hayakawa, Y., Okano, Y., Sakai, S., Fujiwara, S., Imaishi, N., Yamaguchi, Y., Yoda, S., Oida, T., Kumagawa, M.: Effects of Gravity on the Mixing of In-Sb Melt. Int. J. Appl. Electromagn. Mech. 10, 527 (1999)Google Scholar
  12. Inatomi, Y., Sakata, K., Arivanandhan, M., Rajesh, G., Nirmal Kumar, V., Koyoma, T., Momose, Y., Ozawa, T., Okano, Y., Hayakawa, Y.: npj Microgravity 1, 15011 (2015)CrossRefGoogle Scholar
  13. Kim, K.M.: Morphological Instability under Constitutional Supercooling during the Crystal Growth of InSb from the Melt under Stabilizing Thermal Gradient. J. Crystal Growth 44, 403 (1978)CrossRefGoogle Scholar
  14. Kimura, T., Arafune, K., Balakrishnan, K., Ozawa, T., Okano, Y., Murakami, N., Adachi, H., Hayakawa, Y., Kumagawa, M.: Numerical Analysis of the Dissolution Process of GaSb into InSb Melt under Difference Gravity Conditions. J. Crystal Growth 247, 291 (2003)CrossRefGoogle Scholar
  15. Kinosita, K., Arai, Y., Inatomi, Y., Tsukada, T., Adachi, S., Miyata, H., Tanaka, R., Yoshikawa, J., Kihara, T., Tomioka, H., Shibayama, H., Kubota, Y., Warashina, Y., Sasaki, Y., Ishizuka, Y., Harada, Y., Wada, S., Harada, C., Ito, T., Takayanagi, M., Yoda, S., Yamada T.: Growth of a Si 0.50Ge 0.50 Crystal by the Traveling Liquidus-zone (TLZ) Method in Microgravity. J. Crystal Growth 388, 23 (2014)Google Scholar
  16. Kinosita, K., Yamada, T.: Pb 1−xSn xTe Crystal Growth in Space. J. Crystal Growth 147, 91 (1995)CrossRefGoogle Scholar
  17. Kinosita, K., Yamada, T.: Spherical Crystals of Pb 1−xSn xTe Grown in Microgravity. J. Crystal Growth 165, 75 (1996)CrossRefGoogle Scholar
  18. Lendvay, E., Harsy, M., Gorog, T., Gyuro, I., Pozsgai, I., Koltai, F., Gyulai, J., Lohner, T., Mezey, G., Kotai, E., Paszti, F., Hrjapov, V.T., Kultchisky, N.A., Regel, L.L.: The growth of GaSb under microgravity conditions. J. Crystal Growth 71, 538 (1985)CrossRefGoogle Scholar
  19. Mullines, W.W., Sekerka, R.F.: Morphological Stability of a Particle Growing by Diffsuion or Heat Flow. J. Appl. Phys. 34, 323 (1963)CrossRefGoogle Scholar
  20. Murakami, N., Arafune, K., Koyama, T., Kumagawa, M., Hayakawa, Y.: Effect of Gravitational Direction on Dissolution and Growth in GaSb/InSb/GaSb Sandwich System. J.Crystal Growth 263, 320 (2004)CrossRefGoogle Scholar
  21. Murakami, N., Arafune, K., Koyama, T., Kumagawa, M., Hayakawa, Y.: Measurement of Growth Rate by Thermal Pulse Technique and Growth of Homogeneous In xGa 1−xSb Bulk Crystals. J. Crystal Growth 275, 433 (2005)CrossRefGoogle Scholar
  22. Murakami, N., Hikida, T., Konno, A., Arafune, K., Koyama, T., Momose, Y., Ozawa, T., Miyazawa, M., Kumagawa, M., Hayakawa, Y.: Growth of Homogeneous InGaSb Ternary Alloy Semiconductors on InSb Seed. J. Crystal Growth 310, 1433 (2008)CrossRefGoogle Scholar
  23. Nishinaga, T., Ge, P., Huo, C., He, J., Nakamura, T.: Melt Growth of Striation and Etch Pit Free GaSb under Microgravity. J. Crystal Growth 174, 96 (1997)CrossRefGoogle Scholar
  24. Okano, Y., Miyazawa, M., Dost, S., Dao, L.H., Kumagawa, M.: Drop Experiments on Crystallization of InGaSb Semiconductors. J. Crystal Growth 237-239, 1831 (2002)CrossRefGoogle Scholar
  25. Okano, Y., Umemura, S., Enomoto, Y., Hayakawa, Y., Kumagawa, M., Hirata, A., Dost, S.: Numerical Study of Marangoni Convection Effect on the Melting of GaSb/InSb/GaSb. J. Crystal Growth 235, 35 (2002)CrossRefGoogle Scholar
  26. Okitsu, K., Hayakawa, Y., Hirata, A., Fujiwara, S., Okano, Y., Imaishi, N., Yoda, S., Oida, T., Yamaguchi, T., Kumagawa, M.: Gravitational Effects on Mixing and Growth Morphology of an In 0.5Ga 0.5Sb System. Cryst. Res. Tech. 31, 969 (1996)CrossRefGoogle Scholar
  27. Okitsu, K., Hayakawa, Y., Yamaguchi, T., Hirata, A., Fujiwara, S., Okano, Y., Imaishi, N., Yoda, S., Oida, T., Kumagawa, M.: Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity. Jpn. J. Appl. Phys. 36, 3613 (1997)CrossRefGoogle Scholar
  28. Rajesh, G., Arivanandhan, A., Suzuki, N., Tanaka, A., Morii, H., Aoki, A., Koyama, T., Momose, Y., Ozawa, T., Inatomi, Y., Takagi, Y., Okano, Y., Hayakawa, Y.: Effects of Solutal Convection on the Dissolution of GaSb into InSb Melt and Solute Transport Mechanism in InGaSb Solution: Numerical Simulations and In-situ Observation Experiments. J. Crystal Growth 324, 157 (2011)CrossRefGoogle Scholar
  29. Rajesh, G., Arivanandhan, M., Morii, H., Aoki, T., Koyama, T., Momose, Y., Tanaka, A., Ozawa, T., Inatomi, Y., Hayakawa, Y.: In-situ Observations of Dissolution Process of GaSb into InSb Melt by X-ray Penetration Method. J. Crystal Growth 312, 2677 (2010)CrossRefGoogle Scholar
  30. Sakata, K., Mukai, M., Arivanandhan, M., Rajesh, G., Ishikawa, T., Inatomi, Y., Hayakawa, Y.: Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station. Trans. JSASS Aerospace Tech. Japan 12, ph_31 (2014)CrossRefGoogle Scholar
  31. Stringfellow, G.H.: Calculation of Ternary Phase Diagrams of III-V Systems. Phys. Chem. Solids 33, 665 (1972)CrossRefGoogle Scholar
  32. Witt, A.F., Gatos, H.C., Lichtensteiger, M., Lavine, M.C., Herman, C.J.: Crystal Growth and Steady-State Segregation under Zero Gravity: InSb. J. Electrochem. Soc. 122, 276 (1978)CrossRefGoogle Scholar
  33. Zhang, Q., Xiong, Z., Jiang, J., Li, w., Xu, G., Bai, S., Cui, P., Chen, L.: Enhanced thermoelectric performance in In1_xGaxSb originating from the scattering of point defects and nanoinclusion. J. Mater. Chem. 21, 12398 (2011)CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  • Jianding Yu
    • 1
    Email author
  • Yan Liu
    • 1
  • Xiuhong Pan
    • 1
  • Hongyang Zhao
    • 1
  • Velu Nirmal Kumar
    • 2
  • Mukannan Arivanandhan
    • 2
  • Yoshimi Momose
    • 2
  • Yasuhiro Hayakawa
    • 2
  • Xingwang Zhang
    • 3
  • Xinghong Luo
    • 4
  • Yasuhiro Okano
    • 5
  • Yuko Inatomi
    • 6
    • 7
  1. 1.Shanghai Institute of CeramicsChinese Academy of SciencesShanghaiChina
  2. 2.Research Institute of ElectronicsShizuoka UniversityHamamatsuJapan
  3. 3.Institute of SemiconductorChinese Academy of SciencesBeijingChina
  4. 4.Institute of Metal ResearchChinese Academy of SciencesShenyangChina
  5. 5.Graduate School of Engineering ScienceOsaka UniversityOsakaJapan
  6. 6.Institute of Space and Astronautical ScienceJapan Aerospace Exploration AgencySagamiharaJapan
  7. 7.School of Physical SciencesSOKENDAI (The Graduate University for Advanced Studies)SagamiharaJapan

Personalised recommendations