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Modeling of a Sn-Based HTM-Free Perovskite Solar Cell Using a One-Dimensional Solar Cell Capacitance Simulator Tool

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Abstract

Tin (Sn)-based perovskite solar cells (PSCs) have received increasing attention in the domain of photovoltaics due to their environmentally friendly nature. In this paper, numerical modeling and simulation of hole transport material (HTM)-free PSC based on methyl ammonium tin triiodide (CH3NH3SnI3) was performed using a one-dimensional solar cell capacitance simulator (SCAPS-1D) software. The effect of perovskite thickness, interface defect density, temperature, and electron transport material (ETM) on the photovoltaic performance of the device was explored. Prior to optimization, the device demonstrated a power conversion efficiency (PCE) of 8.35%, fill factor (FF) of 51.93%, short-circuit current density (Jsc) of 26.36 mA/cm2, and open circuit voltage (Voc) of 0.610 V. Changing the above parameters individually while keeping others constant, the obtained optimal absorber thickness was 1.0 μm, the interface defect density was 1010 cm–2, the temperature was 290 K, and the TiO2 thickness was 0.01 μm. On simulating with the optimized data, the final device gave a PCE of 11.03%, FF of 50.78%, Jsc of 29.93 mA/cm2, and Voc of 0.726 V. Comparing the optimized and unoptimized metric parameters, an improvement of ~ 32.10% in PCE, ~ 13.41% in Jsc, and ~ 19.02% in Voc were obtained. Therefore, the results of this study are encouraging and can pave the path for developing highly efficient PSCs that are cost-effective, eco-friendly, and comparable to state-of-the-art.

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Acknowledgements

The authors would like to thank Professor Marc Burgelman, Department of Electronics and Information Systems, University of Ghent, for the development of the SCAPS software package and allowing its use.

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Correspondence to Eli Danladi.

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Danladi, E., Kashif, M., Ichoja, A. et al. Modeling of a Sn-Based HTM-Free Perovskite Solar Cell Using a One-Dimensional Solar Cell Capacitance Simulator Tool. Trans. Tianjin Univ. 29, 62–72 (2023). https://doi.org/10.1007/s12209-022-00343-w

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