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130 nm CMOS multi-stage synthetic transmission line based amplifier beyond 100 GHz

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Abstract

A 130 nm CMOS complementary-conducting-strip transmission line(CCS-TL)based multi-stage amplifier beyond 100 GHz was presented in this paper. Different structural parameters were investigated to achieve higher quality factor for the matching circuits. Moreover, CCS-TL based Marchand balun was implemented to achieve higher output power. The measured small signal gain was higher than 5 dB from 101 GHz to 110 GHz. DC power consumption was 67.2 mW with VD=1.2 V, and the chip size including contact PADs was 1.12 mm×0.81 mm.

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Correspondence to Ching-Kuang C. Tzuang  (庄晴光).

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Supported by the National High Technology Research and Development Program of China (“863” Program, No. 2015AA01A703).

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Zhang, M., Wu, HS., Li, G. et al. 130 nm CMOS multi-stage synthetic transmission line based amplifier beyond 100 GHz. Trans. Tianjin Univ. 22, 1–6 (2016). https://doi.org/10.1007/s12209-016-2743-6

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  • DOI: https://doi.org/10.1007/s12209-016-2743-6

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