Abstract
A neuro-space mapping (Neuro-SM) for modeling heterojunction bipolar transistor (HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models.
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Supported by the National Natural Science Foundation of China (No. 61271067).
Yan Shuxia, born in 1987, female, doctorate student.
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Yan, S., Cheng, Q., Wu, H. et al. Neuro-space mapping for modeling heterojunction bipolar transistor. Trans. Tianjin Univ. 21, 90–94 (2015). https://doi.org/10.1007/s12209-015-2493-x
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DOI: https://doi.org/10.1007/s12209-015-2493-x