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Molecular dynamics of nanometric processing of ion implanted monocrystalline silicon surfaces

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Abstract

Three-dimensional molecular dynamics simulations are carried out to study the mechanism of nanometric processing of ion implanted monocrystalline silicon surfaces. Lattice transformation is observed during implantation and nano-indentation using radial distribution function and geometric criterion damage detection. Nano-indentation is simulated to study the changes of mechanical property. Implantation analysis shows the existence of amorphous phase. Indentation process shows the lattice evolution, which is beneficial for reducing fractures during processing. The indentation results reveal the reduction of brittleness and hardness of the implanted surface. The ion fluence is in direct proportion to the damage, and inverse to the hardness of the material. Experiments of ion implantation, nanoindentation, nano-scratching and nanometric cutting were carried out to verify the simulation results.

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Authors and Affiliations

  1. State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China

    Yunhui Chen  (陈耘辉), Fengzhou Fang  (房丰洲), Xiaodong Zhang  (张效栋) & Xiaotang Hu  (胡小唐)

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  1. Yunhui Chen  (陈耘辉)
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  2. Fengzhou Fang  (房丰洲)
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  3. Xiaodong Zhang  (张效栋)
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  4. Xiaotang Hu  (胡小唐)
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Corresponding author

Correspondence to Fengzhou Fang  (房丰洲).

Additional information

Supported by the National Basic Research Program of China (“973” Program, No. 2011CB706703).

Chen Yunhui, born in 1986, female, doctorate student.

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Chen, Y., Fang, F., Zhang, X. et al. Molecular dynamics of nanometric processing of ion implanted monocrystalline silicon surfaces. Trans. Tianjin Univ. 20, 203–209 (2014). https://doi.org/10.1007/s12209-014-2336-1

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  • DOI: https://doi.org/10.1007/s12209-014-2336-1

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