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20 MHz switched-current sample-and-hold circuit with low charge injection

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Abstract

A switched-current sample-and-hold circuit with low charge injection was proposed. To obtain low noise and charge injection, the zero-voltage switching was used to remove the signal-dependent charge injection, and the signal-independent charge injection was reduced by removing the feed-through voltage from the input port of the memory transistor directly. This current sample-and-hold circuit was implemented using CMOS 180 nm 1.8 V technology. For a 0.8 MHz sinusoidal signal input, the simulated signal-to-noise and distortion ratio and total harmonic distortion were improved from 53.74 dB and −51.24 dB to 56.53 dB and −54.36 dB at the sampling rate of 20 MHz respectively, with accuracy of 9.01 bit and power consumption of 0.44 mW.

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Authors and Affiliations

  1. School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China

    Cen Gao  (高 岑), Suying Yao  (姚素英) & Jing Gao  (高 静)

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  1. Cen Gao  (高 岑)
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  2. Suying Yao  (姚素英)
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  3. Jing Gao  (高 静)
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Corresponding author

Correspondence to Suying Yao  (姚素英).

Additional information

Supported by National Natural Science Foundation of China(No.61036004 and No.61076024).

Gao Cen, born in 1981, male, doctorate student.

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Gao, C., Yao, S. & Gao, J. 20 MHz switched-current sample-and-hold circuit with low charge injection. Trans. Tianjin Univ. 19, 47–52 (2013). https://doi.org/10.1007/s12209-013-1957-0

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  • DOI: https://doi.org/10.1007/s12209-013-1957-0

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