Abstract
In wafer polishing pad surface plays a crucial role in the polishing process. With the increase of friction time between pad and wafer, the pad becomes flattened or glazed with particles clogging the pores of the pad and forming a layer of slurry residue and wafer particles, leading to changes of COF, material removal rates and higher defects on the wafer surface. Thus, this study aims to determine the correlation between pad surface deformation, slurry adhesive rate and Coefficient of friction (COF) during friction between felt pad and single -crystal silicon, to analyze the relationship between pad condition and COF. The real-time COF between felt pad and single-crystal silicon wafer are tested which are sorted in groups depending on various loads and oscillation frequencies and surfaces of felt pads measuring by Scanning electron microscope (SEM) are compared. The correlation between pad surface deformation and abrasive adhesion and COF is evaluated through analyzing the experiment results.
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Recommended by Associate Editor Nam-Su Huh
Eun Sang Lee received B.S. and M.S. degrees in Mechanical Engineering from Inha University in 1985 and in 1987. Dr. Lee received a Ph.D. from the Korea Advanced Institute of Science and Technology in 1998. Dr. Lee is currently a Professor at the School of Mechanical Engineering at Inha University in Incheon, Korea. His research fields are in ultraprecision manufacturing, electrochemical micromachining and the development of a semiconductor wafer polishing system.
Woong Kirl Choi received B.S. in Mechanical Engineering from Zhejiang University of Technology, China, in 2011. And now, he is a Ph.D. student in Mechanical Engineering in Inha University, Republic of Korea. His research interests are ultra-precision manufacturing, electrochemical micromachining and Micro/Nano cutting tool manufacturing.
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Choi, W., Kim, S., Choi, S. et al. Pad surface and coefficient of friction correlation analysis during friction between felt pad and single-crystal silicon. J Mech Sci Technol 30, 3113–3118 (2016). https://doi.org/10.1007/s12206-016-0620-9
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DOI: https://doi.org/10.1007/s12206-016-0620-9