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Experimental study on nanofludic heat pipe hot chuck plate in semiconductor wafer baking process

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Abstract

The temperature uniformity on a heat pipe hot chuck (HPHC) during semiconductor wafer processing has been an important factor to critical dimension (300 mm) uniformity as the feature size of semiconductors decreases and productivity density increases due to the new process of nano size special manufacturing technology. To design the present heat pipe hot chuck system, which has enhanced temperature uniformity for the wafer process, the heat distribution of the system was analyzed experimentally with various working fluids such as water, TiO2, ATO, ITO, Al2O3, and Ag-nanofluids and 8 cell structures. Unlike the conventional solid state chuck, the present heat pipe hot chuck system consists of a heat pipe containing specially charged working fluid. Various working fluids have been tested to find best temperature uniformity feature on the top surface of hot chuck. TiO2-nanofluid was used and tested as the working fluid of the heat pipe hot chuck system in this paper. The temperature uniformity of upper surface was sustained in the range of ±1°C. A nano-porous layer was observed on the surface with the good result of surface temperature uniformity compared with distilled water.

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Correspondence to Seok-Ho Rhi.

Additional information

This paper was recommended for publication in revised form by Associate Editor Dongsik Kim

Taek-Kyu Lim is a graduate student in the School of Mechanical Engineering, Chungbuk National University. He is working on heat pipe systems, CFD and heat exchangers.

Seok-Ho Rhi is an Associate Professor in Chungbuk National University and he received the Ph.D degree from the University of Ottawa, Canada. He is interested in heat pipes, heat exchangers and, thermoelectric modules.

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Lim, TK., Rhi, SH. Experimental study on nanofludic heat pipe hot chuck plate in semiconductor wafer baking process. J Mech Sci Technol 24, 1501–1509 (2010). https://doi.org/10.1007/s12206-010-0501-6

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  • DOI: https://doi.org/10.1007/s12206-010-0501-6

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