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Finite element modeling of hydrostatic stress distribution in copper dual-damascene interconnects

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Abstract

Hydrostatic stresses of copper dual-damascene interconnects are calculated by a commercial finite element software in this paper. The analytical work is performed to examine the effects of different low-k (k is permittivity) dielectrics, barrier layer and aspect ratio of via on hydrostatic stress distribution in the copper interconnects. The results of calculation indicate that the hydrostatic stresses are highly non-uniform throughout the copper interconnects and the highest tensile hydrostatic stress exists on the top interface of lower level interconnect near via. Both the high coefficient of thermal expansion and the low elastic modulus of the low-k dielectrics and barrier layer can decrease the highest hydrostatic stress on the top interface, which can improve the reliability of the copper interconnects.

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Guang-jie Yuan  (袁光杰) & Leng Chen  (陈 冷)

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  1. Guang-jie Yuan  (袁光杰)
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  2. Leng Chen  (陈 冷)
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Correspondence to Leng Chen  (陈 冷).

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Foundation item: the National Natural Science Foundation of China (No. 50871016)

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Yuan, Gj., Chen, L. Finite element modeling of hydrostatic stress distribution in copper dual-damascene interconnects. J. Shanghai Jiaotong Univ. (Sci.) 16, 302–306 (2011). https://doi.org/10.1007/s12204-011-1148-x

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  • DOI: https://doi.org/10.1007/s12204-011-1148-x

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