Abstract
Optical interconnects (OIs) are the only solution to fulfil both the requirements on large bandwidth and minimum power consumption of data centers and high-performance computers (HPCs). Vertical-cavity surface-emitting lasers (VCSELs) are the ideal light sources for OIs and have been widely deployed. This paper will summarize the progress made on modulation speed, energy efficiency, and temperature stability of VCSELs. Especially VCSELs with surface nanostructures will be reviewed in depth. Such lasers will provide new opportunities to further boost the performance of VCSELs and open a new door for energy-efficient OIs.
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References
Cisco. Cisco Global Cloud Index: Forecast and Methodology, 2014–2019 White Paper, http://www.cisco.com/c/en/us/solutions/ collateral/service-provider/global-cloud-index-gci/Cloud_Index_ White_Paper.html
TOP500 supercomputer list of November 2015, http://www.top500. org/statistics/perfdevel/
Savage N. Linking with light. IEEE Spectrum, 2002, 39(8): 32–36
Benner A F, Ignatowski M, Kash J A, Kuchta D M, Ritter M B. Exploitation of optical interconnects in future server architectures. IBM Journal of Research and Development, 2005, 49(4/5): 755–775
Coteus P W, Knickerbocker J U, Lam C H, Vlasov Y A. Technologies for exascale systems. IBM Journal of Research and Development, 2011, 55(5): 14-1–14-12
Lam C F, Liu H, Koley B, Zhao X, Kamalov V, Gill V. Fiber optic communication technologies: what’s needed for datacenter network operations. IEEE Communications Magazine, 2010, 48(7): 32–39
Borkar S. Role of interconnects in the future of computing. Journal of Lightwave Technology, 2013, 31(24): 3927–3933
Taubenblatt M A. Optical interconnects for high-performance computing. Journal of Lightwave Technology, 2012, 30(4): 448–457
Miller D A B. Device requirements for optical interconnects to silicon chips. Proceedings of the IEEE, 2009, 97(7): 1166–1185
Miller D A B. Rationale and challenges for optical interconnects to electronic chips. Proceedings of the IEEE, 2000, 88(6): 728–749
Bimberg D. Ultrafast VCSELs for Datacom. IEEE Photonics Journal, 2010, 2(2): 273–275
Larsson A. Advances in VCSELs for communication and sensing. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(6): 1552–1567
Tatum J A, Gazula D, Graham L A, Guenter J K, Johnson R H, King J, Kocot C, Landry G D, Lyubomirsky I, Mac Innes A N, Shaw EM, Balemarthy K, Shubochkin R, Vaidya D, Yan M, Tang F. VCSELbased interconnects for current and future data centers. Journal of Lightwave Technology, 2015, 33(4): 727–732
Grabherr M, Intemann S, King R, Wabra S, Jäger R, Riedl M. VCSEL arrays for high aggregate bandwidth of up to 1.34 Tbps. Proceedings of the Society for Photo-Instrumentation Engineers, 2014, 9001: 900105-1–900105-10
Michalzik R. VCSELs-Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers. Berlin: Springer, 2013, 166
Blokhin S A, Lott J A, Mutig A, Fiol G, Ledentsov N N, Maximov M V, Nadtochiy A M, Shchukin V A, Bimberg D. Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s. Electronics Letters, 2009, 45(10): 501–503
Kuchta D, Rylyakov A, Doany F E, Schow C, Proesel J, Baks C, Westbergh P, Gustavsson J, Larsson A A. 71 Gb/s NRZ modulated 850 nm VCSEL-based optical link. IEEE Photonics Technology Letters, 2015, 27(6): 577–580
Shi J W, Wei Z R, Chi K L, Jiang J W, Wun J M, Lu I C, Chen J, Yang Y J. Single-mode, high-speed, and high-power vertical-cavity surface-emitting lasers at 850 nm for short to medium reach (2 km) optical interconnects. Journal of Lightwave Technology, 2013, 31(24): 4037–4044
Hanson D. Case for using 980 nm (rather than 850 nm) VCSELs for serial 10 Gb/s links with new higher-bandwidth 50 MMF.1999 [Online]. http://www.ieee802.org/3/10G_study/public/july99/hanson_ 1_0799.pdf
Chang Y C, Coldren L A. Efficient, high-data-rate, tapered oxideaperture vertical-cavity surface-emitting lasers. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(3): 704–715
Mutig A, Lott J A, Blokhin S A, Wolf P, Moser P, Hofmann W, Nadtochiy A M, Payusov A, Bimberg D. Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers. Applied Physics Letters, 2010, 97(15): 151101
Wolf P, Moser P, Larisch G, Hofmann W, Bimberg D. High-speed and temperature-stable, oxide-confined 980 nm VCSELs for optical interconnects. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1701207
Héroux J B, Kise T, Funabashi M, Aoki T, Schow C L, Rylyakov A V, Nakagawa S. Energy-efficient 1060-nm optical link operating up to 28 Gb/s. Journal of Lightwave Technology, 2015, 33(4): 733–740
Hatakeyama H, Anan T, Akagawa T, Fukatsu K, Suzuki N, Tokutome K, Tsuji M. Highly reliable high-speed 1.1-mm-range VCSELs with InGaAs/GaAsP-MQWs. IEEE Journal of Quantum Electronics, 2010, 46(6): 890–897
Müller M, Wolf P, Gründl T, Grasse C, Rosskopf J, Hofmann W, Bimberg D, Amann M C. Energy-efficient 1.3 m short-cavity VCSELs for 30 Gb/s error-free optical links. In: Proceedings of 23rd Semiconductor Laser Conference (ISLC), 2012, 1–2
Müller M, Hofmann W, Gründl T, Horn M, Wolf P, Nagel R D, Rönneberg E, Böhm G, Bimberg D, Amann M C. 1550-nm highspeed short-cavity VCSELs. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(5): 1158–1166
Moser P, Hofmann W, Wolf P, Lott J A, Larisch G, Payusov A S, Ledentsov N N, Bimberg D. 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects. Applied Physics Letters, 2011, 98(23): 231106
Moser P, Lott J A, Wolf P, Larisch G, Li H, Ledentsov N N, Bimberg D. 56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s. Electronics Letters, 2012, 48(20): 1292–1294
Haglund E, Westbergh P, Gustavsson J S, Haglund E P, Larsson A, Geen M, Joel A. 30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25–50 Gbit/s. Electronics Letters, 2015, 51(14): 1096–1098
Li H, Wolf P, Moser P, Larisch G, Mutig A, Lott J A, Bimberg D. Energy-efficient and temperature-stable oxide-confined 980 nm VCSELs operating error-free at 38 Gbit/s at 85°C. Electronics Letters, 2014, 50(2): 103–105
Moser P, Lott J A, Wolf P, Larisch G, Li H, Bimberg D. Error-free 46 Gbit/s operation of oxide-confined 980 nm VCSELs at 85°C. Electronics Letters, 2014, 50(19): 1369–1371
Kuchta D M, Rylyakov A V, Schow C L, Proesel J E, Baks C W, Westbergh P, Gustavsson J S, Larsson A A. 50 Gb/s NRZ modulated 850 nm VCSEL transmitter operating error free to 90°C. Journal of Lightwave Technology, 2015, 33(4): 802–810
Tan F, Wu C H, Feng M, Holonyak N. Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission. Applied Physics Letters, 2011, 98(19): 191107
Wu C H, Tan F, Feng M, Holonyak N. The effect of mode spacing on the speed of quantum-well microcavity lasers. Applied Physics Letters, 2010, 97(9): 091103
Coldren L A, Corzine S W. Diode Lasers and Photonic Integrated Circuits. New York: Wiley, 1995
Westbergh P, Gustavsson J S, Kögel B, Haglund Å, Larsson A. Impact of photon lifetime on high-speed VCSEL performance. IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17(6): 1603–1613
Mutig A, Bimberg D. Progress on high-speed 980nm VCSELs for short-reach optical interconnects. Advances in Optical Technologies, 2011, 2011: 290508
Moser P, Wolf P, Mutig A, Larisch G, Unrau W, Hofmann W, Bimberg D. 85°C error-free operation at 38 Gb/s of oxide-confined 980-nm vertical-cavity surface-emitting lasers. Applied Physics Letters, 2012, 100(8): 081103
Li H, Wolf P, Moser P, Larisch G, Mutig A, Lott A, Bimberg D H. Impact of the quantum well gain-to-cavity etalon wavelength offset on the high temperature performance of high bit rate 980-nm VCSELs. IEEE Journal of Quantum Electronics, 2014, 50(8): 613–621
Zhou W, Zhao D, Shuai Y C, Yang H, Chuwongin S, Chadha A, Seo J H, Wang K X, Liu V, Ma Z, Fan S. Progress in 2D photonic crystal Fano resonance photonics. Progress in Quantum Electronics, 2014, 38(1): 1–74
Mateus C F R, Huang M C Y, Deng Y, Neureuther A R, Chang- Hasnain C J. Ultrabroadband mirror using low-index cladded subwavelength grating. IEEE Photonics Technology Letters, 2004, 16(2): 518–520
Mateus C F R, Huang M C Y, Chen L, Chang-Hasnain C J, Suzuki Y. Broad-band mirror (1.12–1.62 mm) using a subwavelength grating. IEEE Photonics Technology Letters, 2004, 16(7): 1676–1678
Boutami S, Ben Bakir B, Leclercq J L, Letartre X, Rojo-Romeo P, Garrigues M, Viktorovitch P, Sagnes I, Legratiet L, Strassner M. Highly selective and compact tunable MOEMS photonic crystal Fabry-Perot filter. Optics Express, 2006, 14(8): 3129–3137
Sciancalepore C, Bakir B B, Letartre X, Fedeli J M, Olivier N, Bordel D, Seassal C, Rojo-Romeo P, Regreny P, Viktorovitch P. Quasi-3D light confinement in double photonic crystal reflectors VCSELs for CMOS-compatible integration. Journal of Lightwave Technology, 2011, 29(13): 2015–2024
Viktorovitch P, Bakir B B, Boutami S, Leclercq J L, Letartre X, Rojo-Romeo P, Seassal C, Zussy M, Cioccio L D, Fedeli J M. 3D harnessing of light with 2.5D photonic crystals. Laser & Photonics Reviews, 2010, 4(3): 401–413
Magnusson R, Shokooh-Saremi M. Physical basis for wideband resonant reflectors. Optics Express, 2008, 16(5): 3456–3462
Shokooh-Saremi M, Magnusson R. Wideband leaky-mode resonance reflectors: influence of grating profile and sublayers. Optics Express, 2008, 16(22): 18249–18263
Karagodsky V, Sedgwick F G, Chang-Hasnain C J. Theoretical analysis of subwavelength high contrast grating reflectors. Optics Express, 2010, 18(16): 16973–16988
Liu A, Fu F, Wang Y, Jiang B, Zheng W. Polarization-insensitive subwavelength grating reflector based on a semiconductor-insulatormetal structure. Optics Express, 2012, 20(14): 14991–15000
Debernardi P, Orta R, Gründl T, Amann M C. 3-D vectorial optical model for high-contrast grating vertical-cavity surface-emitting lasers. IEEE Journal of Quantum Electronics, 2013, 49(2): 137–145
Gebski M, Kuzior O, Dems M, Wasiak M, Xie Y Y, Xu Z J, Wang Q J, Zhang D H, Czyszanowski T. Transverse mode control in highcontrast grating VCSELs. Optics Express, 2014, 22(17): 20954–20963
Huang M C Y, Zhou Y, Chang-Hasnain C J. A surface-emitting laser incorporating a high-indexcontrast subwavelength grating. Nature Photonics, 2007, 1(2): 119–122
Huang M C Y, Zhou Y, Chang-Hasnain C J. A nanoelectromechanical tunable laser. Nature Photonics, 2008, 2(3): 180–184
Boutami S, Benbakir B, Leclercq J L, Viktorovitch P. Compact and polarization controlled 1.55 mm vertical-cavity surface emitting laser using single-layer photonic crystal mirror. Applied Physics Letters, 2007, 91(7): 071105
Hofmann W, Chase C, Müller M, Rao Y, Grasse C, Böhm G, Amann M C, Chang-Hasnain C J. Long-wavelength high-contrast grating vertical-cavity surface-emitting laser. IEEE Photonics Journal, 2010, 2(3): 415–422
Ansbæk T, Chung I S, Semenova E S, Yvind K. 1060-nm tunable monolithic high index contrast subwavelength grating VCSEL. IEEE Photonics Technology Letters, 2013, 25(4): 365–367
Inoue S, Kashino J, Matsutani A, Ohtsuki H, Miyashita T, Koyama F. Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs. Japanese Journal of Applied Physics, 2014, 53(9): 090306
Moharam M G, Gaylord T K. Rigorous coupled-wave analysis of planar grating diffraction. Journal of the Optical Society of America, 1981, 71(7): 811–818
Huang M C Y, Zhou Y, Chang-Hasnain C J. Single mode highcontrast subwavelength grating vertical cavity surface emitting lasers. Applied Physics Letters, 2008, 92(17): 171108
Liu A, Hofmann W, Bimberg D. Two dimensional analysis of finite size high-contrast gratings for applications in VCSELs. Optics Express, 2014, 22(10): 11804–11811
Liu A, Hofmann W, Bimberg D. Integrated high-contrast-grating optical sensor using guided mode. IEEE Journal of Quantum Electronics, 2015, 51(1): 1–8
Liu A, Hofmann W, Bimberg D. VCSELs with surface nanostructures. In: Proceedings of Asia Communications and Photonics Conference, 2014, ATh2B. 4
Zhao D, Ma Z, Zhou W. Field penetrations in photonic crystal Fano reflectors. Optics Express, 2010, 18(13): 14152–14158
Babic D I, Corzine S W. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors. IEEE Journal of Quantum Electronics, 1992, 28(2): 514–524
Chung I S, Mørk J. Speed enhancement in VCSELs employing grating mirrors. Proceedings of the Society for Photo-Instrumentation Engineers, 2013, 8633: 863308
Rao Y, Yang W, Chase C, Huang M C Y, Worland D P, Khaleghi S, Chitgarha M R, Ziyadi M, Willner A E, Chang-Hasnain C J. Long-Wavelength VCSEL using high-contrast grating. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1701311
Karagodsky V, Pesala B, Chase C, Hofmann W, Koyama F, Chang- Hasnain C J. Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings. Optics Express, 2010, 18(2): 694–699
Sciancalepore C, Bakir B B, Menezo S, Letartre X, Bordel D, Viktorovitch P. III–V-on-Si photonic crystal vertical-cavity surfaceemitting laser arrays for wavelength division multiplexing. IEEE Photonics Technology Letters, 2013, 25(12): 1111–1113
Liu A, Wolf P, Schulze J H, Bimberg D. Fabrication and characterization of integrable GaAs-based high-contrast grating reflector and Fabry-Pérot filter array with GaInP sacrificial layer. IEEE Photonics Journal, 2016, 8(1): 2700509
Kumari S, Gustavsson J S, Wang R, Haglund E P, Westbergh P, Sanchez D, Haglund E, Haglund Å, Bengtsson J, Thomas N L, Roelkens G, Larsson A, Baets R. Integration of GaAs-based VCSEL array on SiN platform with HCG. Proceedings of the Society for Photo-Instrumentation Engineers, 2015, 9372: 93720U-1–93720U-7
Schares L, Kash J A, Doany F E, Schow C L, Schuster C, Kuchta D M, Pepeljugoski P K, Trewhella J M, Baks C W, John R A, Shan L, Kwark Y H, Budd R A, Chiniwalla P, Libsch F R, Rosner J, Tsang C K, Patel C S, Schaub J D, Dangel R, Horst F, Offrein B J, Kucharski D, Guckenberger D, Hegde S, Nyikal H, Lin C K, Tandon A, Trott G R, Nystrom M, Bour D P, Tan M R T, Dolfi D W. Terabus: terabit/second-class card-level optical interconnect technologies. IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(5): 1032–1044
Kaur K S, Subramanian A Z, Cardile P, Verplancke R, Van Kerrebrouck J, Spiga S, Meyer R, Bauwelinck J, Baets R, Van Steenberge G. Flip-chip assembly of VCSELs to silicon grating couplers via laser fabricated SU8 prisms. Optics Express, 2015, 23(22): 28264–28270
Louderback D A, Pickrell G W, Lin H C, Fish M A, Hindi J J, Guilfoyle P S. VCSELs with monolithic coupling to internal horizontal waveguides using integrated diffraction gratings. Electronics Letters, 2004, 40(17): 1064–1065
Haglund E P, Kumari S, Westbergh P, Gustavsson J S, Roelkens G, Baets R, Larsson A. Silicon-integrated short-wavelength hybridcavity VCSEL. Optics Express, 2015, 23(26): 33634–33640
Ferrier L, Romeo P R, Letartre X, Drouard E, Viktorovitch P. 3D integration of photonic crystal devices: vertical coupling with a silicon waveguide. Optics Express, 2010, 18(15): 16162–16174
Ferrara J, Yang W, Zhu L, Qiao P, Chang-Hasnain C J. Heterogeneously integrated long-wavelength VCSEL using silicon high contrast grating on an SOI substrate. Optics Express, 2015, 23(3): 2512–2523
Chung I S, Mørk J. Silicon-photonics light source realized by III–V/ Si-grating-mirror laser. Applied Physics Letters, 2010, 97(15): 151113
Park G C, Xue W, Taghizadeh A, Semenova E, Yvind K, Mørk J, Chung I S. Hybrid vertical-cavity laser with lateral emission into a silicon waveguide. Laser & Photonics Reviews, 2015, 9(3): L11–L15
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Anjin Liu received the Bachelor degree in electronics of science and technology in 2006 from Huazhong University of Science and Technology, Wuhan, China, and Ph.D. degree in physical electronics from Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, in 2011, both with honors.
From 2006 to 2011, he was with Institute of Semiconductors, CAS, and was involved in the research on single-mode VCSELs with surface microstructures. From 2012 to July 2013, he was a Postdoc Fellow in Fraunhofer Heinrich Hertz Institute in Berlin, and worked on polymer OEIC. In August of 2013, he joined the group of Prof. Dieter H. Bimberg in Technische Universität Berlin, and explores surface emitters with surface nanostructures for high-speed modulation and new applications. In 2016, he is appointed as Associate Professor with CAS Pioneer Hundred Talents Program in Institute of Semiconductors, CAS. His research interests include modeling, fabricating, and characterizing passive and active photonic devices. He has authored or coauthored about 50 papers in scientific journals and conference proceedings, and holds 1 filed US patent and 12 issued Chinese patents.
He was the recipients of Special Prize of President Scholarship for Postgraduate Students, CAS (2011), Excellent Doctoral Dissertation Award, CAS (2012), and Alexander von Humboldt Postdoctoral Research Fellowship, Germany (2013).
Dieter H. Bimberg received the Diploma in physics and the Ph.D. degree from Goethe University, Frankfurt, in 1968 and 1971, respectively. From 1972 to 1979, he held a Principal Scientist position at the Max Planck-Institute for Solid State Research in Grenoble/France and Stuttgart. In 1979, he was appointed as Professor of Electrical Engineering, Technical University of Aachen.
In 1981, he was appointed to the Chair of Applied Solid State Physics at Technische Universität Berlin. He was elected in 1990 Excecutive Director of the Solid State Physics Institute at TU Berlin, a position he hold until 2011. In 2004, he founded the Center of Nanophotonics at TU Berlin. From 2006 to 2011, he was the chairman of the board of the German Federal Government Centers of Excellence in Nanotechnologies.
His honors include the Russian State Prize in Science and Technology 2001, his election to the German Academy of Sciences Leopoldina in 2004, to the Russian Academy of Sciences in 2011, and to the US National Academy of Engineering in 2014, as Fellow of the American Physical Society and IEEE in 2004 and 2010, respectively, the Max-Born-Award and Medal 2006, awarded jointly by IoP and DPG, the William Streifer Award of the Photonics Society of IEEE in 2010, the UNESCO Nanoscience Medal 2012, and the Heinrich-Welker-Award and medal in 2015. The University of Lancaster bestowed in 2015 the D.Sc.h.c. to him.
He has authored more than 1200 papers, 25 patents, and 6 books resulting in more than 48000 citations worldwide and a Hirsch factor of 98.
His research interests include the growth and physics of nanostructures and nanophotonic devices, ultrahigh speed and energy efficient photonic devices for future datacom systems, single/entangled photon emitters for quantum cryptography and ultimate nanomemories based on quantum dots.
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Liu, A., Bimberg, D. Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects. Front. Optoelectron. 9, 249–258 (2016). https://doi.org/10.1007/s12200-016-0611-6
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DOI: https://doi.org/10.1007/s12200-016-0611-6