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Research on VO x uncooled infrared bolometer based on porous silicon

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Abstract

In this paper, vanadium oxide thin film of TCR of −3.5%/K has been deposited by pulsed DC magnetron sputtering method. The property of this VO x has been investigated by X-ray diffractometer (XRD) and atomic force microscopy (AFM) in detail. XRD test indicates that this film is composed of V2O3, V3O5 and VO2.VO x microbolometer with infrared (IR) absorbing structure is fabricated based on porous silicon sacrificial layer technology. Optimized micro-bridge structure is designed and carried out to decrease thermal conductance and this structure shows good compatibility with micromachining technology. This kind of bolometer with 74% IR absorption of 8–14 μm, has maximum detectivity of 1.09×109 cm·Hz1/2/W at 24 Hz frequency and 9.8 μA bias current.

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Authors and Affiliations

  1. School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

    Bin Wang, Jianjun Lai, Erjing Zhao, Haoming Hu & Sihai Chen

  2. Wuhan National Laboratory for Optoelectronics, Wuhan, 430074, China

    Bin Wang, Jianjun Lai & Sihai Chen

Authors
  1. Bin Wang
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  2. Jianjun Lai
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  3. Erjing Zhao
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  4. Haoming Hu
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  5. Sihai Chen
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Correspondence to Jianjun Lai.

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Wang, B., Lai, J., Zhao, E. et al. Research on VO x uncooled infrared bolometer based on porous silicon. Front. Optoelectron. 5, 292–297 (2012). https://doi.org/10.1007/s12200-012-0224-7

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  • DOI: https://doi.org/10.1007/s12200-012-0224-7

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