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High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers

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Abstract

We will review three recently-proposed high-speed, all-optical Exclusive OR (XOR) gates operating at 40 and 85 Gb/s, which were demonstrated using ultrafast nonlinear interferometers (UNIs) incorporating semiconductor optical amplifiers (SOAs). The first 40-Gb/s XOR gate was obtained using a dual UNI configuration. The second is a 40-Gb/s XOR gate without additional probe beam required, where the only inputs launched into the setup were data A and B. The XOR logic of data A and B is the sum of two components \( \bar A \)B and A\( \bar B \), each of which was obtained from the output of UNI via cross-phase modulation (XPM) in SOAs. Furthermore, an 85-Gb/s XOR gate is, by far, the fastest XOR gate realized by SOAs, which was also demonstrated using a dual UNI structure. The operating speed of the XOR gate was enhanced by incorporating the recently proposed turbo-switch configuration. In addition, the SOA switching pulse energies of these XOR gates were lower than 100 fJ.

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Correspondence to Xuelin Yang.

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Yang, X., Weng, Q. & Hu, W. High-speed, all-optical XOR gates using semiconductor optical amplifiers in ultrafast nonlinear interferometers. Front. Optoelectron. China 3, 245–252 (2010). https://doi.org/10.1007/s12200-010-0105-x

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