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Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode

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Abstract

Blue and green dual wavelength InGaN/GaN multi-quantum well (MQW) light-emitting diode (LED) has wide applications in full color display, monolithic white LED and solid state lighting, etc. Blue and green dual wavelength LEDs, which consist of InGaN strain-reduction layer, green InGaN/GaN MQWand blue InGaN/GaN MQW, were grown by metal-organic chemical vapor deposition (MOCVD), and the luminescence properties of dual wavelength LEDs with different well arrangements were studied by photoluminescence and electroluminescence. The experimental results indicated that well position played an important role on the luminescence evolvement from photoluminescence to electroluminescence.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

    Feng Wen, Lirong Huang, Liangzhu Tong, Dexiu Huang & Deming Liu

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  1. Feng Wen
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  2. Lirong Huang
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  3. Liangzhu Tong
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  4. Dexiu Huang
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  5. Deming Liu
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Correspondence to Lirong Huang.

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Wen, F., Huang, L., Tong, L. et al. Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode. Front. Optoelectron. China 2, 446–449 (2009). https://doi.org/10.1007/s12200-009-0070-4

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  • DOI: https://doi.org/10.1007/s12200-009-0070-4

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