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Growth of phosphorus-doped p-type ZnO thin films by MOCVD

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Abstract

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O2, and P2O5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 Ω·cm, a hole concentration of 1.61 × 1018 cm−3, and a Hall mobility of 0.838 cm2·(V·s)−1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China

    Zhizhen Ye, Jingrui Wang, Yazhen Wu, Xincui Zhou, Fugang Chen, Weizhong Xu, Yan Miao, Jingyun Huang, Jianguo Lü, Liping Zhu & Binghui Zhao

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  1. Zhizhen Ye
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  2. Jingrui Wang
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  3. Yazhen Wu
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  4. Xincui Zhou
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  5. Fugang Chen
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  6. Weizhong Xu
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  7. Yan Miao
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  8. Jingyun Huang
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  9. Jianguo Lü
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  10. Liping Zhu
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  11. Binghui Zhao
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Correspondence to Zhizhen Ye.

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Translated from Chinese Journal of Semiconductors, 2006, 27(1): 91–95 [译自: 半导体学报]

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Ye, Z., Wang, J., Wu, Y. et al. Growth of phosphorus-doped p-type ZnO thin films by MOCVD. Front. Optoelectron. China 1, 147–150 (2008). https://doi.org/10.1007/s12200-008-0024-2

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