Abstract
This section features conversations with personalities related to science, highlighting the factors and circumstances that guided them in making the career choice to be a scientist.
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References
B J Baliga, The Future of Power Semiconductor Device Technology, Proceedings of IEEE, Vol.89, No.6, 2001.
B J Baliga, Enhancement and Depletion-Mode Vertical Channel MOS Gated Thyristors, IEEE Electronics Letters, Vol.15, No.20, 1979.
B J Baliga, The IGBT Compendium: Applications and Social Impact.
Additional information
Hareesh Chandrasekar worked (after BE) as an R&D Engineer at IBM India Systems and Technology Lab from 2008 to 2009. He is currently working towards a PhD in the interdisciplinary Nanoengineering for Integrated Systems (NIS) programme at the Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bangalore. His research is focussed on fabricating and studying heterojunction devices based on Group IIInitride compound semiconductors.
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Chandrasekar, H. The IGBT and its creator. Reson 18, 563–580 (2013). https://doi.org/10.1007/s12045-013-0074-7
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DOI: https://doi.org/10.1007/s12045-013-0074-7