Abstract
The energy band gaps (EgL, EgΓ and EgX) and electronic band structure in the pentanary AlxIn1-xPySbzAs1-y-z semiconducting alloy are determined. Additionally, the Fröhlich coupling parameter, the phonon frequencies (ωLO, ωTO), transverse effective charge (eT*), high-frequency dielectric constant (ε∞), static dielectric constant (ε0) and refractive index (n) are calculated. A combination of the virtual crystal approximation and the empirical pseudopotential approach is used in our study. The calculations are done at room temperature and normal pressure. The studied properties for the new alloy under investigation lattice-matched to the InP substrate give a good agreement with the experiment. It is discovered that materials with lower coupling constants are advantageous for a parametric interaction to be cost-effective. It is expected that this paper's findings will apply to a wide range of industrial applications.
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Alyami, M., Alfrnwani, O.A. & Elkenany, E.B. Transverse effective charge, energy band structure and optical properties of nanostructured AlxIn1-xPySbzAs1-y-z alloy for the solar cells system. Pramana - J Phys 97, 194 (2023). https://doi.org/10.1007/s12043-023-02670-6
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DOI: https://doi.org/10.1007/s12043-023-02670-6