Abstract
An investigation has been made relating the effect of UV radiations on etching parameters and activation energy of CR-39 (solid-state nuclear track detectors, (SSNTDs)). Corresponding changes in bulk etch rate (BER) (VB), track etch rate (TER) (VT), sensitivity (S), critical angle (\(\theta_{{{\text{C}} }} )\) and efficiency (\(\eta ) \) due to pre-irradiation and post-irradiation on CR-39 polycarbonate plastic detector have been reported and discussed in detail. Both bulk activation energy (BAE) (EB) and track activation energy (TAE) (ET) are reported to decrease with post-irradiation and are explained based on chain degradation, free radical formation, cross-linkage, chain scission and softening of the detector material. Further unusual decrease in BAE (EB) and TAE (ET) was observed for pre-irradiated CR-39 polycarbonate detectors, possibly due to the nature and density of the detector material.
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Acknowledgements
Authors thankfully acknowledge Prof. B K Singh, Physics Department, Banaras Hindu University, Varanasi, India, for providing VUV exposure at High Energy Physics Lab, alpha particle irradiation and etching at Nuclear Physics Lab, Department of Physics, Banaras Hindu University.
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Kumar, A., Jain, R.K. UV effect on etching parameters and activation energy of CR-39 plastic detector. Pramana - J Phys 96, 148 (2022). https://doi.org/10.1007/s12043-022-02401-3
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DOI: https://doi.org/10.1007/s12043-022-02401-3