Hot carrier effects on Brillouin susceptibilities of semiconductor magnetoplasmas

Abstract

An analytical investigation is made of hot carrier effects on real and imaginary parts of Brillouin susceptibility ($\mathrm{Re,Im}(\chi _{B} ))$ of semiconductor magnetoplasmas. Coupled mode approach is used to obtain expressions for $\mathrm{Re,Im}(\chi _{B} )$. Numerical calculations are made for the n-InSb crystal–CO$_{2}$ laser system. Efforts are made to obtain enhanced values of ${\mathrm{Re,Im}}(\chi _{B} )$ and change of their sign by an appropriate selection of external magnetic field ($B_{0})$ and doping concentration ($n_{0})$. The hot carrier effects of intense laser radiation modify the momentum transfer collision frequency of carriers and consequently, the nonlinearity of the medium, which in turn (i) further enhances $\mathrm{Re,Im}(\chi _{B} )$, (ii) shifts the enhanced ${\mathrm{Re,Im}}(\chi _{B} )$ towards smaller values of $B_{0}$ and (iii) widens the range of $B_{0}$ at which change of sign of ${\mathrm{Re,Im}}(\chi _{B} )$ occurs. The change of sign of enhanced ${\mathrm{Re,Im}}(\chi _{B} )$ of semiconductor magnetoplasmas validates the possibility of the chosen Brillouin medium as a potential candidate material for the fabrication of stimulated Brillouin scattering-dependent widely tunable and efficient optoelectronic devices such as optical switches and frequency converters.