Abstract
Transparent metal oxide thin films of samarium oxide (Sm2O3) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (\(E_{\mathrm {g}}^{\mathrm {d}}\)) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm2O3 thin films were found to obey the single oscillator model.
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Authors gratefully acknowledge Taif University (project #1-435-3629) for the financial assistance and facilitation of our study.
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ATTA, A.A., EL-NAHASS, M.M., ELSABAWY, K.M. et al. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique. Pramana - J Phys 87, 72 (2016). https://doi.org/10.1007/s12043-016-1285-8
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DOI: https://doi.org/10.1007/s12043-016-1285-8