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Electronic properties of GaV4S8: A percolation approach

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Abstract

Two polycrystalline V4-cluster compounds of GaV4S8 were prepared at different annealing temperatures (GaV4S8-1 sintered at 800 ∘C and GaV4S8-2 sintered at 500 ∘C). Their temperature-dependent resistivity and structural phase transformation temperature (45 K for GaV4S8-1 and 43 K for GaV4S8-2) are found to be very sensitive to the annealing condition. Above 320 K, activation energy ε 3 is calculated to be ∼0.23 eV which decreases to ∼0.18 eV around 300 K in GaV4S8-1 and GaV4S8-2 on cooling. According to percolation theory, the gradual decrease in ε 3 below 300 K is expected due to the increase in separation between V4-clusters are significantly different in GaV4S8-1 and GaV4S8-2. This statement is strongly supported by the calculated bandwidth Γ per cluster in GaV4S8 (∼0.342 eV in GaV4S8-1 and ∼0.374 eV in GaV4S8-2). A negative magnetoresistance (MR) is also found around 43 K in GaV4S8-2 at 6.0 T magnetic field associated with structural transition.

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References

  1. J M Vandenberg and D Brasen, J. Solid State Chem. 14, 203 (1975)

  2. A K Rastogi, Current trends in the Phys. Mater. (World Scientific, Singapore, 1987) p. 316

  3. A R West, Solid state chemistry and its application (Reprint by Wiley India (P) Ltd., New Delhi, 2007) p. 569

  4. H Haeuseler, S Reil and E Elitok, Int. J. Inorg. Mater. 3, 409 (2001)

  5. H Muller, W Kockelmann and D Johrendt, Chem. Mater. 18, 2174 (2006)

  6. Y Sahoo and A K Rastogi, J. Phys.: Condens. Matter 5, 5953 (1993)

  7. Y Sahoo and A K Rastogi, J. Phys. Chem. Solids 57, 467 (1996)

  8. Y Sahoo and A K Rastogi, Physica B 215, 233 (1995)

  9. R Pocha, D Johrendt and R Pottgen, Chem. Mater. 12, 2882 (2000)

  10. H Nakamura, H Chudo and M Shiga, J. Phys.: Condens. Matter 17, 6015 (2005)

  11. D Brasen, J M Vandenberg, M Robbins, R H Willens, W A Reed, R C Sherwood and X J Pinder, J. Solid State Chem. 13, 298 (1975)

  12. C S Yadav, A K Nigam and A K Rastogi, Physica B 403, 1474 (2008)

  13. A Miller and B Abrahams, Phys. Rev. 120, 745 (1960)

  14. G E Pike and C H Seager, Phys. Rev. B 10, 1421 (1974)

  15. M Pollak and M L Knotek, J. Non-Crystall. Solids 32, 141 (1979)

  16. N Shanti and D D Sarma, J. Solid State Chem. 184, 143 (1999)

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Acknowledgement

One of the authors (S Hansda) acknowledges UGC, New Delhi, India for the financial support through Rajiv Gandhi National fellowship to carry out this work.

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Authors and Affiliations

  1. Department of Physics, North Orissa University, Baripada, 757 003, India

    I NAIK & S HANSDA

  2. School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110 067, India

    A K RASTOGI

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  1. I NAIK
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  2. S HANSDA
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Correspondence to I NAIK.

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NAIK, I., HANSDA, S. & RASTOGI, A.K. Electronic properties of GaV4S8: A percolation approach. Pramana - J Phys 86, 127–134 (2016). https://doi.org/10.1007/s12043-015-1014-8

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  • DOI: https://doi.org/10.1007/s12043-015-1014-8

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