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Coherent oscillations of holes in GaAs0.86P0.14/Al0.7Ga0.3As surface quantum well

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Abstract

We show that in a GaAs0.86P0.14/Al0.7Ga0.3As near-surface quantum well, there is coherent oscillation of holes observed in time-resolved reflectivity signal when the top barrier of the quantum well is sufficiently thin. The quantum well states interact with the surface states under the influence of the surface electric field. The time period of the observed oscillation is 120±10 fs.

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Acknowledgements

The authors thank Dr H S Rawat, Head, LPAS for his encouragement and support during this work.

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Authors and Affiliations

  1. Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    SALAHUDDIN KHAN, J JAYABALAN, ASHA SINGH & RAMA CHARI

  2. Semiconductor Laser Section, Raja Ramanna Centre for Advanced Technology, Indore, 452 013, India

    SUPARNA PAL, S PORWAL, T K SHARMA & S M OAK

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  1. SALAHUDDIN KHAN
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  2. J JAYABALAN
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  3. ASHA SINGH
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  4. RAMA CHARI
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  5. SUPARNA PAL
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  6. S PORWAL
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  7. T K SHARMA
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  8. S M OAK
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Correspondence to SALAHUDDIN KHAN.

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KHAN, S., JAYABALAN, J., SINGH, A. et al. Coherent oscillations of holes in GaAs0.86P0.14/Al0.7Ga0.3As surface quantum well. Pramana - J Phys 82, 359–364 (2014). https://doi.org/10.1007/s12043-014-0690-0

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  • DOI: https://doi.org/10.1007/s12043-014-0690-0

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