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Durability of rewritable phase-change Ge X Sb Y Te1 − X − Y memory devices

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Abstract

The bond constraint theory (BCT) dealing with the rigidity caused by bond constraints and the long-range potential fluctuations (LRPF) arising from the defects and heterogeneities in the disordered semiconductors are important for understanding the atomic and electronic properties of amorphous semiconductors. Here, they are applied to the already commercialized Ge X Sb Y Te1 − X − Y (GST) chalcogenide glasses used in the rewritable phase change memory (PCM) devices. The main concern at present is to improve their ability to withstand a large number of phase change cycles, by choosing the right composition. The two considerations (BCT and LRPF) are briefly described and tested on the most commonly used Ge2Sb2Te5 and the nearby compositions. While these considerations provide significant insight into their atomic and electronic structures, the ansatz linking them with the durability of the PCM devices need to be justified by more work.

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References

  1. S R Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968) E J Evans, J H Helbers and S R Ovshinsky, J. Non-Cryst. Solids 2, 334 (1970)

    Google Scholar 

  2. K L Chopra, K S Harshvardhan, S Rajagopalan and L K Malhotra, Solid State Commun. 40, 387 (1981)

    Article  ADS  Google Scholar 

  3. For a comparison of various memory technologies, see, for example, S Natrajan, S Chung, L Paris and A Keshavarzi, IEEE Solid-State Circuits Mag. 1, 34 (2009)

  4. N Yamada, E Ohno, K Nishiuchi, N Akahira and M Takao, J. Appl. Phys. 69, 2849 (1991)

    Article  ADS  Google Scholar 

  5. I Friedrich, V Weidenhof, W Njoroge, P Franz and M Wuttig, J. Appl. Phys. 87, 4130 (2000)

    Article  ADS  Google Scholar 

  6. S C Agarwal, M A Paesler, D A Baker, P C Taylor, G Lucovsky and A Edwards, Pramana – J. Phys. 70, 245 (2008)

    Article  ADS  Google Scholar 

  7. M A Paesler, The Physics Teacher 47, 80 (2009)

    Article  ADS  Google Scholar 

  8. W Welnic, A Pamungkas, R Detemple, C Steimer and S Blugel, Nature Mater. 5, 56 (2006)

    Article  ADS  Google Scholar 

  9. A V Kolobov, P Fons, A Frenkel, A Ankudinov, J Tominaga and T Uruga, Nature Mater. 3, 703 (2004)

    Article  ADS  Google Scholar 

  10. K Shportko, S Kremers, M Woda, D Lencer, J Robertson and M Wuttig, Nature Mater. 7, 653 (2008)

    Article  ADS  Google Scholar 

  11. D A Baker, M A Paesler, G Lucovsky, S C Agarwal and P C Taylor, Phys. Rev. Lett. 96, 255501 (2006)

    Article  ADS  Google Scholar 

  12. J L F Da Silva, A Walsh, S H Wei and H Lee, J. Appl. Phys. 106, 113509 (2009)

    Article  ADS  Google Scholar 

  13. T Siegrist, P Jost, H Volker, M Woda, P Merkelbach, C Schlockermann and M Wuttig, Nature Mater. 10, 202 (2011)

    Article  ADS  Google Scholar 

  14. P Boolchand, X Feng and W J Bresser, J. Non-cryst. Solids 293–295, 348 (2001)

    Article  Google Scholar 

  15. M Micoulaut, J-Y Raty, C Otjacques and C Bichara, Phys. Rev. B 81, 174206 (2010)

    Article  ADS  Google Scholar 

  16. Ch Bapanayya, Rajeev Gupta and S C Agarwal, Phil. Mag. Lett. 91, 134 (2011)

    Article  ADS  Google Scholar 

  17. S C Agarwal, Phys. Status Solidi B 249, 1956 (2012)

    Article  ADS  Google Scholar 

  18. J C Phillips, J. Non-Cryst. Solids 34, 153 (1979)

    Article  ADS  Google Scholar 

  19. M A Paesler, D A Baker and G Lucovsky, J. Non Cryst. Solids 354, 2706 (2008)

    Article  ADS  Google Scholar 

  20. D A Baker, S C Agarwal, G Lucovsky, M A Paesler and P C Taylor, Mater. Res. Soc. Symp. Proc. 918, 157 (2006)

    Google Scholar 

  21. H Overhof and W Beyer, Phil. Mag. B 43, 433 (1981)

    Article  ADS  Google Scholar 

  22. H Overhof and W Beyer, Phil. Mag. B 47, 377 (1983)

    Article  ADS  Google Scholar 

  23. M Hemanadhan, Ch Bapanayya and S C Agarwal, J. Vac. Sci. Technol. A 28, 625 (2010)

    Article  Google Scholar 

  24. P Agarwal and S C Agarwal, J. Appl. Phys. 81, 3214 (1997)

    Article  ADS  Google Scholar 

  25. I Friedrich, V Weidenhof, W Njoroge, P Franz and M Wuttig, J. Appl. Phys. 87, 4130 (2000)

    Article  ADS  Google Scholar 

  26. T Kato and K Tanaka, Jpn. J. Appl. Phys. 44, 7340 (2005)

    Article  ADS  Google Scholar 

  27. B S Lee, J R Abelson, S G Bishop, D H Kang, B Cheong and Ki-Bum Kim, J. Appl. Phys. 97, 093509 (2005)

    Article  Google Scholar 

  28. N F Mott and E A Davis, Electronic processes in non-crystalline materials, 2nd edn (Clarendon Press, Oxford, 1979) p. 235

    Google Scholar 

  29. H Fritzsche, J. Non-Cryst. Solids 6, 49 (1971)

    Article  ADS  Google Scholar 

  30. H Overhof and W Beyer, Phil. Mag. B 49, L9 (1984)

    Article  Google Scholar 

  31. S C Agarwal, Phys. Rev. B 15, 685 (1974)

    Google Scholar 

  32. M Kastner, D Adler and H Fritzsche, Phys. Rev. Lett. 37, 1504 (1976)

    Article  ADS  Google Scholar 

  33. N P Reddy and S C Agarwal, Unpublished

  34. E M Sanchez, E F Prokhorov, A Mendoza-Galvan and J Gonzalez-Hernandez, J. Appl. Phys. 91, 697 (2002)

    Article  ADS  Google Scholar 

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Acknowledgements

The authors are grateful to H Fritzsche, M A Paesler, K L Chopra and P Boolchand for useful comments. The authors also thank R C Budhani for the Excimer laser, and Ram Bilas and the M.Sc. students (M Hemanadhan, Ayoti Patra, Ankit Goel, Ashish Shukla) for help in the experimental work. The financial support by CSIR, New Delhi is also gratefully acknowledged.

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Correspondence to S C AGARWAL.

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REDDY, N.P., BAPANAYYA, C., GUPTA, R. et al. Durability of rewritable phase-change Ge X Sb Y Te1 − X − Y memory devices. Pramana - J Phys 80, 1065–1081 (2013). https://doi.org/10.1007/s12043-013-0532-5

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