Abstract.
Interfacial characteristics of metal oxide-silicon carbide (MOSiC) structure with different thickness of SiO2, thermally grown in steam ambient on Si-face of 4H-SiC (0 0 0 1) substrate were investigated. Variations in interface trapped level density (D it) was systematically studied employing high-low (H-L) frequency C–V method. It was found that the distribution of D it within the bandgap of 4H-SiC varied with oxide thickness. The calculated D it value near the midgap of 4H-SiC remained almost stable for all oxide thicknesses in the range of 109–1010 cm−2 eV−1. The D it near the conduction band edge had been found to be of the order of 1011 cm−2 eV−1 for thicker oxides and for thinner oxides D it was found to be the range of 1010 cm−2 eV−1. The process had direct relevance in the fabrication of MOS-based device structures.
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GUPTA, S.K., AZAM, A. & AKHTAR, J. Variation of interface trap level charge density within the bandgap of 4H-SiC with varying oxide thickness. Pramana - J Phys 76, 165–172 (2011). https://doi.org/10.1007/s12043-011-0023-5
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DOI: https://doi.org/10.1007/s12043-011-0023-5