Abstract
Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (V oc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H2-plasma treatment that promotes nanocrystalline silicon (nc-Si:H) formation. This paper presents the structure of this p-type material characterized by high resolution transmission electron microscope (HRTEM). It is found that the p-layer that leads to high V oc a-Si:H solar cells is a mixed-phase material that contains fine-grained nc-Si:H embedded in a-Si:H matrix.
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This paper has been withdrawn by Pramana as the editors have determined that the material presented in this paper is a complete copy of the material which has been published by other authors in other journals and reports.
The retraction note to this article can be found online at http://dx.doi.org/10.1007/s12043-013-0514-7.
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Yusoff, A.R.M., Syahrul, M.N. & Henkel, K. RETRACTED ARTICLE: High resolution transmission electron microscope studies of a-Si:H solar cells. Pramana - J Phys 68, 995–999 (2007). https://doi.org/10.1007/s12043-007-0098-1
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DOI: https://doi.org/10.1007/s12043-007-0098-1