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Electro-optical characterization and analysis of CuPc-based solar cells with high photovoltage

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Abstract

Organic solar cells using the CuPc and PTCBI semiconductor layers were studied. A high open circuit voltage of 1.15 V was obtained in a device with ITO/PEDOT:PSS/CuPc (15 nm)/PTCBI (7 nm)/Al structure. Results were interpreted in terms of a modified CuPc-Al Schottky diode for the thin PTCBI case and a CuPc-PTCBI heterojunction for the thick PTCBI case. Also, the formation of a thin aluminum oxide layer under the aluminum electrode was postulated. This layer has a beneficial aspect wherein shunting losses are reduced and a high photovoltage is enabled. However, it adds greatly to the series resistance to a point where the short circuit current density is reduced. CuPc Schottky diodes with an ITO/PEDOT:PSS/CuPc/Al structure yielded a high V oc of 900 mV for a CuPc layer of thickness 140 nm. The V oc increased with increase in CuPc layer thickness.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department and Center for Nanoscale Science and Engineering, University of Kentucky, 40506, Lexington, KY, USA

    V P Singh, R S Singh & A M Hermann

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  1. V P Singh
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  2. R S Singh
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  3. A M Hermann
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Singh, V.P., Singh, R.S. & Hermann, A.M. Electro-optical characterization and analysis of CuPc-based solar cells with high photovoltage. Pramana - J Phys 67, 67–72 (2006). https://doi.org/10.1007/s12043-006-0037-6

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  • DOI: https://doi.org/10.1007/s12043-006-0037-6

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