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Accelerated potential-induced degradation technology for crystalline silicon cells

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Abstract

Potential-induced degradation (PID) is recently recognized as one of the most important degradation mechanisms in crystalline silicon cells as well as in photovoltaic (PV) modules. The ability of solar cells to resist PID effect is one of the key indicators of product quality monitoring. Traditional PID testing methods are complex and require up to 96 h in treating. To accelerate the PID test, a rapid PID treatment technology was urgent for PV field, which can extremely decrease the time expense. Hence, we have introduced a novel rapid PID treating technology, which reduced the treatment time from nearly 100 h to less than 8 h. This technology was applying an electric field directly on the solar cells to simulate the PID process of the modules. The process was named as electric field treatment (EFT). The effect of the applied EFT voltage on the solar cells was investigated from 1 to 1.8 KV. The degradation rate of the solar cells increased with increase in EFT voltage. The result of the energy dispersive spectrometer showed that the sodium element was found in the shunt area of the cell. It indicated that the microscopic principle of the power loss of the cell caused by the EFT was in accordance with that of the traditional PID. The electric performances of the cells treated by EFT showed that the PID test time can be accelerated to less than 8 h.

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Acknowledgements

We thank Wuxi Suntech Power Co., Ltd. for providing the test silicon cells. This research was supported by the National Natural Science Foundation of China (Grant No. 61804066), China Postdoctoral Science Foundation (2020M671602), Jiangsu Postdoctoral Science Foundation (2020K143B) and The innovation team project of Zhejiang Province (2019R01012).

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Authors and Affiliations

  1. School of Science, Jiangnan University, Wuxi, 214122, China

    Qiyan Sun, Mingxi Li, Xi Xi & Guilin Liu

  2. Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Wuxi, 214122, China

    Xi Xi, Guilin Liu & Bingjie Zhu

  3. School of Internet of Things, Jiangnan University, Wuxi, 214122, China

    Lan Wang

  4. Wuxi Institution of Supervision and Testing on Product Quality, Wuxi, 214101, China

    Bingjie Zhu

  5. Wuxi Suntech Power Co., Ltd., Wuxi, 214208, China

    Liping Chen

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  1. Qiyan Sun
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  2. Mingxi Li
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  3. Xi Xi
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  4. Guilin Liu
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  5. Lan Wang
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  7. Liping Chen
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Correspondence to Xi Xi.

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Sun, Q., Li, M., Xi, X. et al. Accelerated potential-induced degradation technology for crystalline silicon cells. Bull Mater Sci 45, 94 (2022). https://doi.org/10.1007/s12034-022-02681-w

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  • DOI: https://doi.org/10.1007/s12034-022-02681-w

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