Abstract
The pressure and composition-dependent electronic properties such as energy band structure, energy bandgaps of pentanary alloy GaxIn1−xPySbzAs1−y−z lattice-matched to InP have been studied. Also, the pressure and composition-dependent of the optical properties as refractive index, high-frequency dielectric constant, static dielectric constant, polarity, covalency, ionicity, susceptibility and reflectivity of the pentanary alloy GaxIn1−xPySbzAs1−y−z have been determined. The empirical pseudo-potential method was used in our calculations. Excellent agreement was obtained between our results and the experimental values at the ambient pressure. Our results for different values of pressure (30, 60, 90 and 120 Kbar) are predictions for the experimental data. The studied properties for the considered alloy may be useful in the design and fabrication of optoelectronic devices.
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Al Maaitah, I.F., Elkenany, E.B. Influence of pressure and composition on the electronic and optical properties of pentanary alloy GaxIn1−xPySbzAs1−y−z lattice-matched to InP substrate. Bull Mater Sci 45, 97 (2022). https://doi.org/10.1007/s12034-022-02671-y
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DOI: https://doi.org/10.1007/s12034-022-02671-y