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ZTO transparent conducting thin films for optoelectronic applications

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Abstract

Zinc oxide (ZnO) and tin-doped zinc oxide (ZTO) conducting films were prepared by a sol–gel spin-coating method on the glass substrate. Effects of Sn-doping on structural, morphological and optical properties of ZnO were carried out by X-ray diffraction (XRD) pattern, field emission scanning electron microscopy (FESEM) and UV–Vis spectrophotometer, respectively. ZTO thin films exhibit the wrinkle-type morphology. The transmittance spectra of ZTO thin films were recorded in the wavelength range of 350–800 nm. The optical band gap was found to vary from 3.29 to 3.36 eV with increase in the concentration of Sn. The electrical properties of ZTO thin films were investigated by a two-probe electrometer and the dark current and UV–photo current were observed with respect to 5 V applied bias voltage. The obtained results of ZTO transparent conducting layer were very attentive for optoelectronic devices.

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Authors and Affiliations

  1. Department of Physics, Gurukula Kangri University, Haridwar, 249404, India

    Rishabh Raj, Himanshu Gupta & L P Purohit

Authors
  1. Rishabh Raj
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  2. Himanshu Gupta
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  3. L P Purohit
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Correspondence to Himanshu Gupta.

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Raj, R., Gupta, H. & Purohit, L.P. ZTO transparent conducting thin films for optoelectronic applications. Bull Mater Sci 44, 165 (2021). https://doi.org/10.1007/s12034-021-02480-9

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  • DOI: https://doi.org/10.1007/s12034-021-02480-9

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