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Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency

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Abstract

The dielectric properties of the Al/PCBM:ZnO/p-Si structure were investigated using the impedance spectroscopy technique. PCBM:ZnO layer was obtained by spin coating method on the p-Si. The morphological properties of the PCBM:ZnO were investigated using atomic force microscopy. The results highlighted that PCBM:ZnO thin film has uniform surfaces. The dielectric parameters such as real and imaginary parts of the electric modulus (M′ and M″) and ac electrical conductivity (σ), dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ) values were determined. The results of the dielectric properties of the Al/PCBM:ZnO/p-Si structures impressed voltage and frequency changing. The Al/PCBM:ZnO/p-Si structures can be regarded as a candidate for organic diode applications.

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Acknowledgements

This study was supported by Selcuk University BAP Office under Project Number 19401034 and Hitit University BAP Office under Project Numbers FEF.19004.15.010 and FEF01.13.003.

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Authors and Affiliations

  1. Department of Physics, Hitit University, 19030, Corum, Turkey

    Dilber Esra Yildiz

  2. Engineering Faculty, Department of Electrical and Electronics Engineering, Igdir University, 76000, Igdir, Turkey

    Adem Kocyigit

  3. Meram Vocational School, Necmettin Erbakan University, 42090, Konya, Turkey

    Mehmet Okan Erdal

  4. Faculty of Science, Department of Biotechnology, Selcuk University, 42130, Konya, Turkey

    Murat Yildirim

Authors
  1. Dilber Esra Yildiz
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  2. Adem Kocyigit
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  3. Mehmet Okan Erdal
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  4. Murat Yildirim
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Correspondence to Dilber Esra Yildiz.

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Yildiz, D.E., Kocyigit, A., Erdal, M.O. et al. Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency. Bull Mater Sci 44, 25 (2021). https://doi.org/10.1007/s12034-020-02297-y

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