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Effect of off-stoichiometry on properties of tin selenide crystals

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Abstract

The tin selenide crystals with different proportions of Sn and Se were grown by a direct vapour-transport technique. The layer by layer growth of crystals from the vapour phase was promoted by screw dislocation mechanism. The powder X-ray diffraction (XRD) shows good crystallinity of grown compound. The XRD patterns of grown compounds are well-indexed to orthorhombic structure. In the off-stoichiometric compound, evidence of \(\hbox {SnSe}_{{2}}\) secondary phase is observed due to excess of selenium. The morphological investigations were carried out using a Carl Zeiss optical microscope. The electron diffraction was also recorded from tiny flakes using a transmission electron microscope. The electrical resistivity both parallel and perpendicular to the c-axis was measured in the temperature range of 303–490 K and activation energy was also calculated using Arrhenius relation. The electrical study depicts the extrinsic semiconducting nature of grown compositions.

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Authors and Affiliations

  1. Department of Physics, Sardar Patel University, Anand, 388120, Gujarat, India

    Mohit Tannarana, G K Solanki, K D Patel, V M Pathak & Pratik Pataniya

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  1. Mohit Tannarana
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  2. G K Solanki
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  3. K D Patel
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  4. V M Pathak
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  5. Pratik Pataniya
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Correspondence to Mohit Tannarana.

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Tannarana, M., Solanki, G.K., Patel, K.D. et al. Effect of off-stoichiometry on properties of tin selenide crystals. Bull Mater Sci 42, 79 (2019). https://doi.org/10.1007/s12034-019-1777-5

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  • DOI: https://doi.org/10.1007/s12034-019-1777-5

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