Abstract
Semiconducting nanomaterials of II–VI groups are the key elements of continued technological approaches made in the field of optoelectronic, magnetic and photonic devices due to their size-dependent properties. Ion beams create changes in the material along their track; this not only exhibits excellent properties but also tailors new materials. This article reports the effect of \(\hbox {Ar}^{+}\) ion implantation on the properties of cadmium telluride thin films of about 80 nm thickness. The implantation parameters were adjusted based on computer-aided learning using SRIM (stopping and range of ions in matter) software. The CdTe thin films were deposited by electrodeposition method on ITO substrate. Thin films of CdTe are exposed to \(\hbox {Ar}^{+}\) ions with different fluencies of \(1 \times 10^{15}\), \(5 \times 10^{15}\) and \(1 \times 10^{16} \, \hbox {ions cm}^{-2}\) at Ion Beam Centre, Kurukshetra University, Kurukshetra, India. After implantation, the films were characterized using UV–visible spectroscopy, photoluminescence (PL) and a four-probe set-up with a programmable current–voltage (I–V) source metre. The scanning electron microscopy of pristine film showed smooth and uniform growth of sphere-shaped grains on substrate surface. From optical studies, the values of optical band gap for as-deposited and argon-ion-implanted thin films were calculated. It was found that values of optical band gap decreased with the increase in fluence of ion beam. From PL studies it was found that the intensity got increased with ion fluence. A considerable increase in current was noticed from I–V measurements with ion fluence after implantation. Different properties of pre- and post-implanted thin films are studied.
Similar content being viewed by others
References
Razykov T M, Karazhanov S Z, Leiderman A Y, Khusainova N F and Kouchkarov K 2006 Sol. Energy Mater. Sol. Cells 90 2255
Afzaal M and O Brien P 2006 J. Mater. Chem. 16 1597
Şişman İ and Demir Ü 2011 J. Electroanal. 651 222
Mathew X, Enriquez J P, Romeo A and Tiwari A N 2004 Sol. Energy 77 831
Chi K, Li Q, Meng X, Liu L and Yang H 2017 J. Mater. Sci. 52 10431
Al-Ghamdi A A, Khan S A, Nagat A and El-Sadek M A 2010 Opt. Laser Technol. 42 1181
Shenouda A Y, Rashad M M and Chow L 2013 J. Alloys Compd. 563 39
Pdvdariya S and Nainkorn 2018 J. Miner. Met. Mater. Soc. 180 735
Ede A M D, Morton E J and DeAntonis P 2001 Nucl. Instrum. Methods A 458 7
Duffy N W, Peter L M, Wang R L, Lane D W and Rogers K D 2000 Electrochim. Acta 45 3355
Cruz L R, Pinheiro W A, Medeiro R A, Ferreira C L, Dhere R G and Duenow J N 2013 Vacuum 87 45
Rohatgi A, Ringel S A, Sudharsanan R, Meyers P V, Liu C H and Ramanathan V 1989 Sol. Cells 27 219
Bicknell R N, Giles N C and Schetzina J F 1986 Appl. Phys. Lett. 49 1095
Rusu G G, Rusu M and Girtan M 2007 Vacuum 81 1476
Li Q, Chi K, Mu Y, Zhang W, Yang H, Fu W et al 2014 Mater. Lett. 117 225
Sites J and Pan J 2007 Thin Solid Films 515 6099
Wei S H and Zhang S B 2002 Phys. Rev. B 66 155211
Kraft C, Brömel A, Schönherr S, Hädrich M, Reislöhner U, Schley P et al 2011 Thin Solid Films 519 7153
Mohanty T, Dhounsi S, Kumar P, Tripathi A and Kanjilal D 2009 Surf. Coat. Technol. 203 2410
Popović M, Novaković M, Mitrić M, Zhang K and Bibić N 2015 Int. J. Refract. Met. Hard Mater. 48 318
Keshri S, Kumar A and Kabiraj D 2012 Thin Solid Films 526 50
Shanmugan S and Mutharasu D 2010 Mater. Sci. Semicond. Process. 13 298
Senthil K, Mangalaraj D, Narayandass S K, Hong B, Roh Y, Park C S et al 2002 Semicond. Sci. Technol. 17 97
Bolse W 2006 Nucl. Instrum. Methods 244 8
Chauhan K R, Burgess I J, Chang G S and Mukhopadhyay I 2014 J. Electroanal. 713 70
Shenouda A Y and El Sayed M 2015 Ain Shams Eng. J. 6 341
Luo H, Ma L G, Xie W M, Wei Z L, Gao K G, Zhang F M et al 2016 Appl. Phys. A 122 444
Cullity B D and Stock S R 2001 Elements of X-ray diffraction 3rd edn (New Jersey: Prentice-Hall) p 167
Ding C, Ming Z, Li B, Feng L and Wu J 2013 Mater. Sci. Eng. B 178 801
J Tauc and Menth A 1972 J. Non-Cryst. Solids 8 569
Lalitha S, Sathyamoorthy R, Senthilarasu S, Subbarayan A and Natarajan K 2004 Sol. Energy Mater. Sol. Cells 82 187
Amin G A, El-Sayed S M, Saad H M, Hafez F M and Abd-El-Rahman M 2007 Radiat. Meas. 42 400
Parikh N R, Thompson D A and Carpenter G J C 1986 Radiat. Eff. 98 289
Novaković M, Popović M, Zhang K, Rakočević Z and Bibić N 2016 Opt. Mater. 62 57
Orhan E, Anicete-Santos M, Maurera M A, Pontes F M, Paiva-Santos C O, Souza A G et al 2005 Chem. Phys. 312 1
Kannappan P, Asokan K, Krishna J B M and Dhanasekaran R 2013 J. Alloys Compd. 580 284
Acknowledgements
We are thankful to Ion Beam Centre, Kurukshetra University, Kurukshetra, India, for providing implantation facility for our samples. We also acknowledge Director, NIT Kurukshetra, India, for providing SEM, XRD and UV–visible spectrophotometer facilities and I–V measurement facilities.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Goyal, S., Chauhan, R.P. Effect of \(\hbox {Ar}^{+}\) ion implantation on the properties of electrodeposited CdTe thin films. Bull Mater Sci 41, 131 (2018). https://doi.org/10.1007/s12034-018-1649-4
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s12034-018-1649-4